IDB12E120_07 datasheet, PDF - EEWORLD Datasheet

IDB12E120_07: Description28 A, 1200 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size213KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IDB12E120_07 Overview

28 A, 1200 V, SILICON, RECTIFIER DIODE

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Green, Plastic, TO-220 Surface Mount, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Maximum power consumption limit	96 W
Diode type	rectifier diode
application	FAST RECOVERY
Phase	1
Maximum reverse recovery time	0.1500 us
Maximum repetitive peak reverse voltage	1200 V
Maximum average forward current	28 A
Maximum non-repetitive peak forward current	63 A

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