TLC271IDG4 datasheet, PDF - EEWORLD Datasheet

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TLC271IDG4: DescriptionOP-AMP, 13000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8; CategoryAnalog mixed-signal IC Amplifier circuit; File Size3MB，84 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance; Related ProductsFound4parts with similar functions to TLC271IDG4

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TLC271IDG4 Overview

OP-AMP, 13000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8

TLC271IDG4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	SOIC
package instruction	GREEN, PLASTIC, MS-012AA, SOIC-8
Contacts	8
Reach Compliance Code	unknown
Amplifier type	OPERATIONAL AMPLIFIER
Maximum average bias current (IIB)	0.00006 µA
Nominal Common Mode Rejection Ratio	80 dB
Maximum input offset voltage	13000 µV
JESD-30 code	R-PDSO-G8
JESD-609 code	e4
length	4.9 mm
Humidity sensitivity level	1
Number of functions	1
Number of terminals	8
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum seat height	1.75 mm
Nominal slew rate	2.9 V/us
Supply voltage upper limit	18 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	NICKEL PALLADIUM GOLD
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Nominal Uniform Gain Bandwidth	1700 kHz
width	3.9 mm

TLC271IDG4 Preview

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TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001

IN –

IN +

3 2 1 20 19

9 10 11 12 13

OFFSET N1

BIAS SELECT

OUT

PACKAGE

CHIP CARRIER

(FK)

—

CERAMIC DIP

(JG)

—

Input Offset Voltage Drift . . . Typically

0.1

µV/Month,

Including the First 30 Days

Wide Range of Supply Voltages Over

Specified Temperature Range:

0°C to 70°C . . . 3 V to 16 V

– 40°C to 85°C . . . 4 V to 16 V

– 55°C to 125°C . . . 5 V to 16 V

Single-Supply Operation

Common-Mode Input Voltage Range

Extends Below the Negative Rail (C-Suffix

and I-Suffix Types)

Low Noise . . . 25 nV/√Hz Typically at

f = 1 kHz (High-Bias Mode)

Output Voltage Range Includes Negative

Rail

High Input Impedance . . . 10

Ω

Typ

ESD-Protection Circuitry

Small-Outline Package Option Also

Available in Tape and Reel

Designed-In Latch-Up Immunity

D, JG, OR P PACKAGE

(TOP VIEW)

OFFSET N1

IN –

IN +

GND

BIAS SELECT

OUT

OFFSET N2

FK PACKAGE

(TOP VIEW)

description

The TLC271 operational amplifier combines a

wide range of input offset voltage grades with low

NC – No internal connection

offset voltage drift and high input impedance. In

addition, the TLC271 offers a bias-select mode

that allows the user to select the best combination of power dissipation and ac performance for a particular

application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset

voltage stability far exceeding the stability available with conventional metal-gate processes.

AVAILABLE OPTIONS

VIOmax

AT 25°C

2 mV

5 mV

10 mV

2 mV

5 mV

10 mV

SMALL OUTLINE

(D)

TLC271BCD

TLC271ACD

TLC271CD

TLC271BID

TLC271AID

TLC271ID

TLC271MD

PLASTIC DIP

(P)

TLC271BCP

TLC271ACP

TLC271CP

TLC271BIP

TLC271AIP

TLC271IP

TLC271MP

0°C to 70°C

– 40°C to 85°C

– 55°C to 125°C

—

TLC271MFK

TLC271MJG

The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.



2001, Texas Instruments Incorporated

POST OFFICE BOX 655303

•

DALLAS, TEXAS 75265

GND

OFFSET N2

—

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001

DEVICE FEATURES

PARAMETER†

BIAS-SELECT MODE

HIGH

3375

3.6

1.7

MEDIUM

525

0.4

0.5

170

LOW

0.03

0.09

480

UNIT

µW

V/µs

nV/√Hz

MHz

V/mV

AVD

† Typical at VDD = 5 V, TA = 25°C

description (continued)

Using the bias-select option, these cost-effective devices can be programmed to span a wide range of

applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are

available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)

low-offset version. The extremely high input impedance and low bias currents, in conjunction with good

common-mode rejection and supply voltage rejection, make these devices a good choice for new

state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers,

without the power penalties of bipolar technology. General applications such as transducer interfacing, analog

calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The

devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and

inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density

system applications.

The device inputs and output are designed to withstand – 100-mA surge currents without sustaining latch-up.

The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000

V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices

as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized

for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military

temperature range of – 55°C to 125°C.

bias-select feature

The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending

on the level of performance desired. The tradeoffs between bias levels involve ac performance and power

dissipation (see Table 1).

Table 1. Effect of Bias Selection on Performance

TYPICAL PARAMETER VALUES

25 C,

TA = 25°C, VDD = 5 V

AVD

Power dissipation

Slew rate

Equivalent input noise voltage at f = 1 kHz

Unity-gain bandwidth

Phase margin

Large-signal differential voltage amplification

MODE

HIGH BIAS

RL = 10 kΩ

3.4

3.6

1.7

46°

MEDIUM BIAS

RL = 100 kΩ

0.5

0.4

0.5

40°

170

LOW BIAS

RL = 1 MΩ

0.05

0.03

0.09

34°

480

V/mV

UNIT

V/µs

nV/√Hz

MHz

POST OFFICE BOX 655303

•

DALLAS, TEXAS 75265

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001

bias selection

Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see Figure 1). For

medium-bias applications, it is recommended that the bias select pin be connected to the midpoint between the

supply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supply

applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of

large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,

large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to

the supply midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is within

the voltages specified in Figure 1.

VDD

Low

To the Bias

Select Pin

Medium

1 MΩ

BIAS MODE

Low

BIAS-SELECT VOLTAGE

(single supply)

VDD

1 V to VDD – 1 V

GND

High

1 MΩ

0.01

µF

Medium

High

Figure 1. Bias Selection for Single-Supply Applications

high-bias mode

In the high-bias mode, the TLC271 series features low offset voltage drift, high input impedance, and low noise.

Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gain

bandwidth is typically greater than 1 MHz.

medium-bias mode

The TLC271 in the medium-bias mode features low offset voltage drift, high input impedance, and low noise.

Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that

consumed by bipolar devices.

POST OFFICE BOX 655303

•

DALLAS, TEXAS 75265

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001

low-bias mode

In the low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low power

consumption, and high differential voltage gain.

ORDER OF CONTENTS

TOPIC

schematic

absolute maximum ratings

recommended operating conditions

electrical characteristics

operating characteristics

typical characteristics

electrical characteristics

operating characteristics

typical characteristics

electrical characteristics

operating characteristics

typical characteristics

parameter measurement information

application information

BIAS MODE

all

high

(Figures 2 – 33)

medium

(Figures 34 – 65)

low

(Figures 66 – 97)

all

equivalent schematic

VDD

P9A

P12

P9B

P11

IN –

P10

N11

P6A

P6B

P7B

P7A

IN +

N12

N13

N10

OFFSET OFFSET

OUT

GND

BIAS

SELECT

POST OFFICE BOX 655303

•

DALLAS, TEXAS 75265

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