Advance Technical Information
HiPerFAST
TM
IGBT
with Fast Diode
B2-Class
High Speed IGBTs with
Ultrafast Diode
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque (TO-247)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1 ms
IXGH 32N90B2D1
IXGT 32N90B2D1
V
CES
I
C25
V
CE(sat)
t
fi
typ
= 900 V
= 64 A
= 2.7 V
= 150 ns
Maximum Ratings
900
900
±20
±30
64
32
200
I
CM
= 64
300
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
TO-247 (IXGH)
C (TAB)
G
C
E
TO-268 (IXGT)
G
E
C (TAB)
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load: V
CL
<
600V
T
C
= 25°C
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
1.13/10Nm/lb.in.
TO-247
TO-268
6
4
g
g
•
High frequency IGBT
•
High current handling capability
•
MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
min. typ. max.
3.0
5.0
300
1.5
± 100
T
J
= 125°C
2.2
2.1
2.7
V
μA
mA
nA
V
V
•
PFC circuits
•
Uninterruptible power supplies (UPS)
•
Switched-mode and resonant-mode
power supplies
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250 mA, V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
= ± 20 V
I
C
= I
C110
, V
GE
= 15 V
T
J
= 150°C
•
AC motor speed control
•
DC servo and robot drives
•
DC choppers
Advantages
•
High power density
•
Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99392(12/05)
IXGH 32N90B2D1
IXGT 32N90B2D1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
18
28
1790
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
146
49
89
I
C
= I
C110
, V
GE
= 15 V, V
CE
= 0.5 V
CES
15
34
20
Inductive load, T
J
= 25°C
I
C
= I
C110
, V
GE
= 15 V
V
CE
= 720 V, R
G
= R
off
= 5
Ω
22
260
150
2.2
20
Inductive load, T
J
= 125°C
I
C
= I
C110
A, V
GE
= 15 V
V
CE
= 720 V, R
G
= R
off
= 5
Ω
22
3.8
360
330
5.75
4.5
400
S
∅
P
TO-247 AD Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
I
C
= I
C110
, V
CE
= 10 V
Pulse test, t < 300
μs,
duty cycle < 2 %
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.42 K/W
TO-268 Outline
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
2.2
2.6
A
2
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
(TO-247)
0.25
K/W
Ultrafast Diode
Symbol
I
F110
Conditions
T
C
= 110°C
Maximum Ratings
27
A
Symbol
Conditions
(T
J
= 25°C unless otherwise specified)
V
F
I
RM
t
rr
R
thJC
R
thCS
I
F
= 30 A;
Characteristic Values
Min. Typ. Max.
2.75
T
VJ
= 125°C
1.9
5.5
190
0.25
11.4
0.9
V
V
A
ns
K/W
K/W
I
F
= 50 A; di
F
/dt = -100 A/μs; T
VJ
= 100°C
V
R
= 100 V; V
GE
= 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 1. Output Characteristics
@ 25
º
C
70
V
GE
= 15V
60
50
13V
11V
9V
200
11V
Fig. 2. Extended Output Characteristics
@ 25
º
C
240
V
GE
= 15V
13V
I
C
- Amperes
40
30
20
10
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
7V
I
C
- Amperes
160
120
9V
80
7V
40
0
0
2
4
6
8
10
12
14
16
18
20
V
C E
- Volts
Fig. 3. Output Characteristics
@ 125
º
C
70
V
GE
= 15V
60
50
13V
11V
9V
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
7V
1.5
1.4
V
GE
= 15V
V
C E
- Volts
Fig. 4. Dependence of V
CE(sat)
on
Tem perature
V
C E (sat)
- Normalized
1.3
1.2
1.1
I
C
= 64A
I
C
- Amperes
I
C
= 32A
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
I
C
= 16A
5V
V
CE
- Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
6
5.5
5
I
C
= 64A
32A
16A
T
J
= 25
º
C
140
120
100
T
J
- Degrees Centigrade
Fig. 6. Input Adm ittance
I
C
- Amperes
V
C E
- Volts
4.5
4
3.5
3
2.5
2
1.5
6
7
8
9
10
11
12
13
14
15
16
17
80
60
40
20
0
4
5
6
7
8
9
10
T
J
= 125
º
C
25
º
C
-40
º
C
V
G E
- Volts
V
G E
- Volts
© 2005 IXYS All rights reserved
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 7. Transconductance
35
30
25
20
15
10
5
0
0
20
40
60
80
100
T
J
=
-40
º
C
25
º
C
1
º
C
25
16
14
12
Fig. 8. Gate Charge
V
CE
= 450V
I
C
= 32A
0mA
I
G
=1
g
f s
- Siemens
V
G E
- Volts
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90
100
I
C
- Amperes
Fig. 9. Capacitance
10000
f = 1 MHz
C
ies
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
100
200
70
Q
G
- nanoCoulombs
Fig. 10. Reverse-Bias Safe
Operating Area
Capacitance - p F
1000
C
oes
100
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10Ω
dV/dT < 10V/ns
C
res
10
300
400
500
600
700
800
900
V
C E
- Volts
V
C E
- Volts
Fig. 11. Maxim um Transient Therm al Resistance
1
R
( t h ) J C
- ºC / W
0.1
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 12. Dependence of Turn-off
Energy Loss on Gate Resistance
18
16
14
I
C
= 64A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 720V
I
C
= 32A
16
14
T
J
= 125
º
C
12
10
8
6
4
2
I
C
= 16A
0
0
5
10
15
20
25
30
35
40
45
50
0
0
5
10
15
20
25
30
35
I
C
= 16A
40
45
50
I
C
= 32A
V
GE
= 15V
V
CE
= 720V
Fig. 13. Dependence of Turn-on
Energy Loss on Gate Resistance
E
o f f
- MilliJoules
12
10
8
6
4
2
E
o n
- MilliJoules
I
C
= 64A
R
G
- Ohms
Fig. 14. Dependence of Turn-off
Energy Loss on Collector Current
16
14
R
G
= 5Ω
V
GE
= 15V
T
J
= 125
º
C
9
8
7
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
R
G
- Ohms
Fig. 15. Dependence of Turn-on
Energy Loss on Collector Current
T
J
= 125
º
C
E
o f f
- MilliJoules
12
10
8
6
4
2
0
10
E
o n
- MilliJoules
V
CE
= 720V
6
5
4
3
2
1
0
T
J
= 25
º
C
T
J
= 25
º
C
20
30
40
50
60
70
10
20
30
40
50
60
70
I
C
- Amperes
Fig. 16. Dependence of Turn-off
Energy Loss on Tem perature
16
14
12
10
8
6
4
2
0
25
35
45
55
65
75
85
95
I
C
= 16A
105 115 125
I
C
= 32A
R
G
= 5Ω
V
GE
= 15V
10
9
8
I
C
= 64A
R
G
= 5
Ω
V
GE
= 1
5V
V
CE
= 720V
I
C
- Amperes
Fig. 17. Dependence of Turn-on
Energy Loss on Tem perature
I
C
= 64A
E
o f f
- MilliJoules
E
o n
- MilliJoules
V
CE
= 720V
7
6
5
4
3
2
1
0
25
I
C
= 32A
I
C
= 16A
35
45
55
65
75
85
95
105
115 125
T
J
- Degrees Centigrade
T
J
- Degrees Centigrade
© 2005 IXYS All rights reserved
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