PD - 94269
IPS511E
FULLY PROTECTED HIGH SIDE
POWER MOSFET SWITCH
Features
•
•
•
•
•
•
•
Over temperature protection (with auto-restart)
Short-circuit protection (current limit )
Active clamp
E.S.D protection
Status feedback
Open load detection
Logic ground isolated from power ground
Product Summary
R
ds(on)
V
clamp
I
Limit
V
open load
150m
Ω
(max)
50V
5A
3V
Description
The IPS511E is fully protected five terminal high side
switch with built in short circuit, over-temperature, ESD
protection, inductive load capability and diagnostic
feedback. The output current is controlled when it
reaches Ilim value. The current limitation is activated
until the thermal protection acts. The over-tempera-
ture protection turns off the high side switch if the
junction temperature exceeds Tshutdown. It will
automatically restart after the junction has cooled
7
o
C below Tshutdown. A diagnostic pin is provided
for status feedback of short-circuit, over-temperature
and open load detection. The double level shifter
circuitry allows large offsets between the logic ground
and the load ground.
Truth Table
Op. Conditions
Normal
Normal
Open load
Open load
Over current
Over current
Over-temperature
Over-temperature
In
Out
H
H
L
L
H
H
L
H
H
L (limiting)
L
L
H L (cycling)
L
L
Dg
H
L
H
H
L
L
L
L
Typical Connection
+ VCC
+ 5v
15K
Status
feedback
Rdg
Rin
Output pull-up resistor
Packages
Vcc
Dg
Logic
control
Out
In
Gnd
Logic
signal
Load
Logic Gnd
Load Gnd
LCC 18
1
6/18/01
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IPS511E
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25
o
C unless otherwise specified).
Symbol Parameter
Vout
Voffset
Vin
Vcc max
Iin, max.
Vdg
Idg, max
Isd
cont.
Maximum output voltage
Maximum Input voltage
Maximum Vcc voltage
Maximum IN current
Maximum diagnostic output voltage
Maximum diagnostic output current
Diode max. permanent current
(1)
Min.
Vcc-50
-0.3
—
-5
-0.3
-1
—
—
—
—
—
-40
—
Max.
Vcc+0.3
Vcc+0.3
5.5
50
10
5.5
10
2.2
10
4
0.5
20
+150
300
Units
Test Conditions
Maximum logic ground to load ground offset Vcc-50
V
mA
V
mA
A
C=100pF, R=1500Ω,
kV
W
o
Isd
pulsed
Diode max. pulsed current
(1)
ESD1
Electrostatic discharge voltage
(Human Body)
ESD2
Pd
T j max.
T lead
Electrostatic discharge voltage
(Machine Model)
Maximum power dissipation
(1)
Max. storage & operating junction temp.
Lead temperature (soldering 10 seconds)
C=200pF, R=0Ω, L=10µH
C
Thermal Characteristics
Symbol Parameter
Rth 1
Rth 2
Thermal resistance junction to case
Thermal resistance junction to ambient
Min.
—
—
Typ.
6.25
90
Max. Units Test Conditions
—
—
o
C/W
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
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IPS511E
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Vcc
VIH
VIL
I out
Continuous Vcc voltage
High level input voltage
Low level input voltage
Continuous output current
(TAmbient = 85
o
C, Tj = 125
o
C, Rth < 60
o
C/W)
(TAmbient = 85
o
C, Tj = 125
o
C, Rth = 80
o
C/W)
Recommended resistor in series with IN pin
Recommended resistor in series with DG pin
Min.
5.5
4
-0.3
—
—
4
10
Max.
35
5.5
0.9
1.7
1.5
6
20
Units
V
A
k
Ω
Rin
Rdg
Static Electrical Characteristics
(Tj = 25
o
C, Vcc = 14V unless otherwise specified.)
Symbol Parameter
R ds(on)
R ds(on)
R ds(on)
Vcc oper.
V
clamp 1
V
clamp 2
Vf
Icc off
Icc on
Icc ac
V dgl
I oh
I ol
Idg
leakage
Min.
—
—
—
5.5
50
—
—
—
—
—
—
—
0
—
—
1
—
0.1
Typ.
125
125
215
—
56
58
0.9
16
0.7
20
0.15
60
—
—
2.3
1.95
70
0.25
Max. Units Test Conditions
150
150
—
35
—
65
1.2
50
2
—
0.4
110
25
10
3
—
200
0.5
mΩ
Vin = 5V, Iout = 2.5A
Tj = 25
o
C
Vin = 5V, Iout = 1A
Vcc = 6V
Vin = 5V, Iout = 2.5A
Tj = 150
o
C
Id = 10mA
(see Fig.1 & 2)
Id = Isd
(see Fig.1 & 2)
Id = 2.5A, Vin = 0V
Vin = 0V, Vout = 0V
Vin = 5V
Vin = 5V
Idg = 1.6 mA
Vout = 6V
Vout = 0V
Vdg = 5.5V
V
µA
V
Vin = 5V
ON state resistance
ON state resistance
ON state resistance
Operating voltage range
Vcc to OUT clamp voltage 1
Vcc to OUT clamp voltage 2
Body diode forward voltage
Supply current when OFF
Supply current when ON
Ripple current when ON (AC RMS)
Low level diagnostic output voltage
Output leakage current
Output leakage current
Diagnostic output leakage current
IN high threshold voltage
IN low threshold voltage
On state IN positive current
Input hysteresis
V
µA
mA
µA
V
µA
V ih
V il
Iin , on
In hyst.
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IPS511E
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5.6Ω, T
j
= 25
o
C, (unless otherwise specified).
Symbol
Parameter
Tdon
Turn-on delay time
Tr1
Rise time to Vout = Vcc - 5V
Tr2
Rise time Vcc - 5V to Vout = 90% of Vcc
dV/dt (on) Turn ON dV/dt
Eon
Turn ON energy
T doff
Turn-off delay time
Tf
Fall time to Vout = 10% of Vcc
dV/dt (off) Turn OFF dV/dt
Eoff
Turn OFF energy
Tdiag
Vout to Vdiag propagation delay
Min.
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units Test Conditions
7
10
45
1.3
400
15
10
2
80
5
50
50
100
4
—
50
50
6
—
15
µs
See figure 3
V/µs
µJ
µs
V/µs
µJ
µs
See figure 4
See figure 6
Protection Characteristics
Symbol Parameter
I lim
Internal current limit
T sd+
Over-temp. positive going threshold
T sd-
Over-temp. negative going threshold
V
sc
Short-circuit detection voltage (3)
V
open load
Open load detection threshold
(3) Referenced to Vcc
Min.
3
—
—
2
2
Typ.
5
165
158
3
3
Max. Units Test Conditions
7
—
—
4
4
A
C
o
C
V
V
o
Vout = 0V
See fig. 2
See fig. 2
See fig. 2
Pad Assignments
NC
NC
NC
NC
NC
VCC
NC
VCC
VCC
GND
NC
IN
DG
NC
SOURCE
NC
NC
SOURCE
4
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IPS511E
Functional Block Diagram
All values are typical
VCC
50V
Over
temperature
165°C
158°C
Tj
62 V
Charge
pump
2.7 V
IN
7 V
200 KΩ
Level
2.2 V
shift
driver
-
DG
7 V
20
Ω
-
+
Open load
3V
Current
limit
+
5A
+
Short-circuit
-
3V
GND
VOUT
T clamp
Vin
Vin
5V
0V
Iout
Ilim.
limiting
T shutdown
cycling
Iout
( + Vcc )
Out
0V
V clamp
T
Tsd+
Tsd-
° )
(160
( see Appl . Notes to evaluate power dissipation )
Figure 1 - Active clamp waveforms
Figure 2 - Protection timing diagram
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