DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| package instruction | BGA, BGA60,9X12,40/32 |
| Reach Compliance Code | compliant |
| Maximum access time | 0.7 ns |
| Maximum clock frequency (fCLK) | 166 MHz |
| I/O type | COMMON |
| interleaved burst length | 2,4,8 |
| JESD-30 code | R-PBGA-B60 |
| memory density | 268435456 bit |
| Memory IC Type | DDR DRAM |
| memory width | 4 |
| Humidity sensitivity level | 3 |
| Number of terminals | 60 |
| word count | 67108864 words |
| character code | 64000000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 64MX4 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | BGA |
| Encapsulate equivalent code | BGA60,9X12,40/32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY |
| Peak Reflow Temperature (Celsius) | 240 |
| power supply | 2.5 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| Continuous burst length | 2,4,8 |
| Maximum standby current | 0.003 A |
| Maximum slew rate | 0.26 mA |
| Nominal supply voltage (Vsup) | 2.5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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