K4E660812D-JC60 datasheet, PDF

K4E660812D-JC60: DescriptionEDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32; Categorystorage storage; File Size416KB，21 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4E660812D-JC60 Overview

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	SOJ
package instruction	SOJ, SOJ32,.44
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-J32
JESD-609 code	e0
length	20.96 mm
memory density	67108864 bit
Memory IC Type	EDO DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ32,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	3.76 mm
self refresh	NO
Maximum standby current	0.0005 A
Maximum slew rate	0.1 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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