TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1997, Power Innovations Limited, UK
NOVEMBER 1997 - REVISED DECEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
V
DRM
V
58
66
100
120
145
180
200
220
240
270
V
(BO)
V
72
82
125
150
180
240
260
290
320
380
LP PACKAGE
(TOP VIEW)
T(A)
NC
R(B)
1
2
3
NC - No internal connection
MD4XADA
PACKAGE WITH FORMED
LEADS FOR LPR VERSION
(TOP VIEW)
T(A)
NC
R(B)
NC - No internal connection
MD4XAH
1
2
3
q
Rated for International Surge Wave Shapes
WAVE SHAPE
10/160 µs
0.5/700 µs
10/700 µs
10/560 µs
10/1000 µs
STANDARD
FCC Part 68
I3124
ITU-T K20/21
FCC Part 68
REA PE-60
I
TSP
A
60
38
50
45
35
device symbol
q
Ordering Information
DEVICE TYPE
TISP4xxxF3LP
TISP4xxxF3LPR
PACKAGE TYPE
TO-92 Bulk Pack
Formed Lead TO-92 Tape and Reeled
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP4xxxF3LP range consists of ten voltage variants to meet various maximum system voltage levels
(58 V to 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. These protection devices are supplied in a TO-92 (LP) cylindrical plastic package. The
difference between the TISP4xxxF3LP and TISP4xxxF3LPR versions is shown in the ordering information.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
The TISP4xxxF3LP is a straight lead TO-92 supplied in bulk pack and the TISP4xxxF3LPR is a formed lead
TO-92 supplied on tape and reeled.
absolute maximum ratings
RATING
‘4072
‘4082
‘4125
‘4150
Repetitive peak off-state voltage (0°C < T
J
< 70°C)
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 1.5 kV, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz,
1s
Linear current ramp, Maximum ramp value < 38 A
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C.
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
I
TSM
di
T
/dt
T
J
T
stg
I
TSP
175
120
60
50
38
38
50
45
35
80
70
4
250
-40 to +150
-40 to +150
A
A/µs
°C
°C
A
V
DRM
SYMBOL
VALUE
± 58
± 66
± 100
± 120
± 145
± 180
± 200
± 220
± 240
± 270
V
UNIT
electrical characteristics for the T and R terminals, T
J
= 25°C
PARAMETER
I
DRM
Repetitive peak off-
state current
TEST CONDITIONS
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
‘4072
‘4082
‘4125
‘4150
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
R
SOURCE
= 300
Ω
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
MIN
TYP
MAX
±10
±72
±82
±125
±150
±180
±240
±260
±290
±320
±380
V
UNIT
µA
PRODUCT
2
INFORMATION
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
electrical characteristics for the T and R terminals, T
J
= 25°C (continued)
PARAMETER
TEST CONDITIONS
‘4072
‘4082
‘4125
‘4150
V
(BO)
Impulse breakover
voltage
dv/dt = ±1000 V/µs,
di/dt < 20 A/µs
R
SOURCE
= 50
Ω,
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±250 V/ms,
R
SOURCE
= 300
Ω
±0.15
±0.15
±5
±10
V
d
= 1 Vrms, V
D
= 0,
‘4072 - ‘4082
‘4125 - ‘4180
C
off
Off-state capacitance
‘4240 - ‘4380
f = 100 kHz,
V
d
= 1 Vrms, V
D
= -50 V
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
63
43
44
25
15
11
108
74
74
40
25
20
pF
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz,
MIN
TYP
±86
±96
±143
±168
±198
±267
±287
±317
±347
±407
±0.6
±3
A
V
A
kV/µs
µA
V
MAX
UNIT
thermal characteristics
PARAMETER
R
θJA
Junction to free air thermal resistance
TEST CONDITIONS
P
tot
= 0.8 W, T
A
= 25°C, 5 cm
2
, FR4 PCB
MIN
TYP
MAX
156
UNIT
°C/W
PRODUCT
INFORMATION
3
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
I
DRM
-v
V
DRM
I
DRM
I
H
V
D
I
D
I
D
V
D
V
DRM
+v
V
(BO)
I
(BO)
I
(BO)
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAAB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PRODUCT
4
INFORMATION
TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP
TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED DECEMBER 1997
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC3LAF
1.10
NORMALISED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC3MAIA
10
I
D
- Off-State Current - µA
Normalised Breakover Voltage
1.05
1
0·1
V
D
= 50 V
V
D
= -50 V
1.00
0·01
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
0.95
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 2.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
Figure 3.
HOLDING CURRENT
vs
JUNCTION TEMPERATURE
0.5
0.4
TC3MAL
TC3LAHA
I
T
- On-State Current - A
I
H
- Holding Current - A
0.3
10
0.2
25°C
150°C
-40°C
1
1
3
4
5 6
V
T
- On-State Voltage - V
2
7 8 9 10
0.1
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 4.
Figure 5.
PRODUCT
INFORMATION
5
Talking
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