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APT5560BN-GULLWING

Description
13A, 550V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size153KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APT5560BN-GULLWING Overview

13A, 550V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

APT5560BN-GULLWING Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeTO-247
package instructionFLANGE MOUNT, R-PSFM-G3
Contacts3
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage550 V
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)157 pF
JESD-30 codeR-PSFM-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment240 W
Maximum pulsed drain current (IDM)52 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)118 ns
Maximum opening time (tons)60 ns

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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