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CY62256V
256K (32K x 8) Static RAM
Features
• High Speed
— 70 ns
• Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
• Low voltage range:
— 2.7V – 3.6V
• Low active power and standby power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in a Pb-free and non Pb-free standard 28-pin
narrow SOIC, 28-pin TSOP-1 and 28-pin Reverse
TSOP-1 packages
Functional Description
[1]
The CY62256V family is composed of two high-performance
CMOS static RAM’s organized as 32K words by 8 bits. Easy
memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and Tri-state drivers.
These devices have an automatic power-down feature,
reducing the power consumption by over 99% when
deselected.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH.
Logic Block Diagram
INPUTBUFFER
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
CE
WE
OE
A
14
A
13
A
12
A
11
A
1
A
0
ROW DECODER
I/O
0
I/O
1
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
32K × 8
ARRAY
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05057 Rev. *F
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised July 25, 2006
CY62256V
Product Portfolio
Power Dissipation
V
CC
Range (V)
Product
CY62256VLL
Range
Com’l/Ind’l
Automotive
Min.
2.7
Typ.
[2]
3.0
Max.
3.6
Speed
(ns)
70
Operating, I
CC
(mA)
Typ.
[2]
11
Max.
30
Standby, I
SB2
(µA)
Typ.
[2]
0.1
Max.
5
130
Pin Configurations
Narrow SOIC
Top View
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A
4
A3
A2
A1
OE
A0
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A
11
A
10
A
9
A
8
A
7
A
6
A
5
V
CC
WE
A
4
A
3
A
2
A
1
OE
7
6
5
4
3
2
1
28
27
26
25
24
23
22
8
9
10
11
12
13
14
15
16
17
18
19
20
21
TSOP I
Reverse Pinout
Top View
(not to scale)
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
GND
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
TSOP I
Top View
(not to scale)
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
Pin Definitions
Pin Number
1–10, 21, 23–26
11–13, 15–19
27
20
22
Input
Input/Output
Input/Control
Input/Control
Input/Control
Type
A
0
–A
14
. Address Inputs
I/O
0
–I/O
7
. Data lines. Used as input or output lines depending on operation
WE.
When selected LOW, a WRITE is conducted. When selected HIGH, a READ
is conducted
CE.
When LOW, selects the chip. When HIGH, deselects the chip
OE.
Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins
behave as outputs. When deasserted HIGH, I/O pins are Tri-stated, and act as
input data pins
GND.
Ground for the device
V
CC
. Power supply for the device
Description
14
28
Ground
Power Supply
Note:
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C, and t
AA
= 70 ns.
Document #: 38-05057 Rev. *F
Page 2 of 12
CY62256V
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) ........................................... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[3]
.................................–0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature (T
A
)
[4]
0
°
C to +70
°
C
−40
°
C to +85
°
C
−40
°
C to +125
°
C
V
CC
2.7V to 3.6V
CY62256V Commercial
Industrial
Automotive
Electrical Characteristics
Over the Operating Range
CY62256V-70
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
GND < V
IN
< V
CC
Com’l, Ind’l
Automotive
I
OZ
Output Leakage Current
GND < V
IN
< V
CC
, Output Disabled Com’l, Ind’l
Automotive
I
CC
I
SB1
I
SB2
V
CC
Operating Supply Current V
CC
= 3.6V, I
OUT
= 0 mA,
f = f
Max
= 1/t
RC
Automatic CE Power-down
Current— TTL Inputs
Automatic CE Power-down
Current— CMOS Inputs
V
CC
= 3.6V, CE > V
IH
,
V
IN
> V
IH
or V
IN
< V
IL
, f = f
Max
All ranges
All ranges
I
OH
=
−1.0
mA
I
OL
= 2.1 mA
Test Conditions
V
CC
= 2.7V
V
CC
= 2.7V
2.2
–0.5
–1
–10
–1
–10
11
100
0.1
0.1
0.1
Min.
2.4
0.4
V
CC
+0.3V
0.8
+1
+10
+1
+10
30
300
5
10
130
Typ.
[2]
Max.
Unit
V
V
V
V
µA
µA
µA
µA
mA
µA
µA
Com’l
V
CC
= 3.6V, CE > V
CC
– 0.3V
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V, f = 0
Ind’l
Automotive
Notes:
3. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
4. T
A
is the “Instant-On” case temperature.
Document #: 38-05057 Rev. *F
Page 3 of 12
CY62256V
Capacitance
[5]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= V
CC(typ.)
Max.
6
8
Unit
pF
pF
Thermal Resistance
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
[6]
Thermal Resistance
(Junction to Case)
[5]
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
2-layer printed circuit board
SOIC
68.45
26.94
TSOPI
87.62
23.73
RTSOPI
87.62
23.73
Unit
°C/W
°C/W
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
50 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
10%
GND
< 5 ns
Equivalent to:
THEVENIN EQUIVALENT
R
TH
OUTPUT
V
TH
ALL INPUT PULSES
90%
90%
10%
< 5 ns
Parameter
R1
R2
R
TH
V
TH
3.3V
1100
1500
645
1.750
Units
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.4V, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
Com’l
Ind’l
Auto
t
CDR[6]
t
R[6]
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
t
RC
Conditions
[6]
Min.
1.4
0.1
0.1
0.1
3
6
50
ns
ns
Typ.
[2]
Max.
Unit
V
µA
Data Retention Waveform
DATA RETENTION MODE
V
CC
V
CC(min)
t
CDR
V
DR
> 1.4V
V
CC(min)
t
R
CE
Notes:
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed V
CC
+ 0.3V.
Document #: 38-05057 Rev. *F
Page 4 of 12
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