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AH167-82

Description
Variable Capacitance Diode, Very High Frequency to KA Band, 1.32pF C(T), 60V, Gallium Arsenide, Abrupt
CategoryDiscrete semiconductor    diode   
File Size111KB,5 Pages
Manufacturere2v technologies
Download Datasheet Parametric View All

AH167-82 Overview

Variable Capacitance Diode, Very High Frequency to KA Band, 1.32pF C(T), 60V, Gallium Arsenide, Abrupt

AH167-82 Parametric

Parameter NameAttribute value
package instructionO-XEMW-F2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage60 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio3.4
Nominal diode capacitance1.32 pF
Diode component materialsGALLIUM ARSENIDE
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO KA BAND
JESD-30 codeO-XEMW-F2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor5500
surface mountYES
Terminal formFLAT
Terminal locationEND
Varactor Diode ClassificationABRUPT
Base Number Matches1
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