K4S64163LF-GR1L datasheet, PDF

K4S64163LF-GR1L: DescriptionSynchronous DRAM, 4MX16, 7ns, CMOS, PBGA52, CSP-52; Categorystorage storage; File Size63KB，8 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S64163LF-GR1L Overview

Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA52, CSP-52

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA, BGA52,6X13,30
Contacts	52
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	105 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B52
length	11 mm
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	52
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature	-25 °C
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA52,6X13,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
power supply	1.8/2.5,2.5 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.0005 A
Maximum slew rate	0.1 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
width	6.6 mm

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