2N7002TG-AN3-R datasheet, PDF - EEWORLD Datasheet

2N7002TG-AN3-R: DescriptionSMALL SIGNAL, FET; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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2N7002TG-AN3-R Overview

SMALL SIGNAL, FET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	HALOGEN FREE PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.3 A
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	7.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	2N7002TG-AN3-R	2N7002TL-AN3-R	2N7002T
Description	SMALL SIGNAL, FET	SMALL SIGNAL, FET	SMALL SIGNAL, FET
Is it Rohs certified?	conform to	conform to	-
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	-
package instruction	HALOGEN FREE PACKAGE-3	LEAD FREE PACKAGE-3	-
Contacts	3	3	-
Reach Compliance Code	compli	compli	-
ECCN code	EAR99	EAR99	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	60 V	60 V	-
Maximum drain current (Abs) (ID)	0.3 A	0.3 A	-
Maximum drain current (ID)	0.3 A	0.3 A	-
Maximum drain-source on-resistance	7.5 Ω	7.5 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
Maximum feedback capacitance (Crss)	5 pF	5 pF	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-
Number of components	1	1	-
Number of terminals	3	3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	0.2 W	0.2 W	-
surface mount	YES	YES	-
Terminal form	GULL WING	GULL WING	-
Terminal location	DUAL	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-

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