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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> ST183C04CFN0
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ST183C04CFN0

Description
Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
CategoryAnalog mixed-signal IC    Trigger device   
File Size172KB，9 Pages
ManufacturerInternational Rectifier （ Infineon ）
Websitehttp://www.irf.com/
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ST183C04CFN0 Overview

Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3

ST183C04CFN0 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier （ Infineon ）
Parts packaging codeBUTTON
package instructionDISK BUTTON, O-CEDB-N2
Contacts3
Manufacturer packaging codeA-PUK
Reach Compliance Codecompliant
Other featuresHIGH SPEED
Shell connectionISOLATED
Nominal circuit commutation break time10 µs
ConfigurationSINGLE
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JEDEC-95 codeTO-200AB
JESD-30 codeO-CEDB-N2
JESD-609 codee0
Maximum leakage current40 mA
On-state non-repetitive peak current5130 A
Number of components1
Number of terminals2
Maximum on-state current370000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current690 A
Maximum repetitive peak off-state leakage current40000 µA
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

ST183C04CFN0 Preview

Bulletin I25178 rev. B 04/00
ST183C..C SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
370A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST183C..C
370
55
690
25
4900
5130
120
110
400 to 800
10 to 20
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
www.irf.com
1
ST183C..C Series
Bulletin I25178 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
04
ST183C..C
08
800
900
400
V
RSM
, maximum
non-repetitive peak voltage
V
500
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
40
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
770
730
600
350
50
V
DRM
50
40
I
TM
180
o
el
660
600
490
270
50
50
55
1220
1270
1210
860
50
V
DRM
-
40
I
TM
100µs
1160
1090
1040
730
50
-
55
5450
2760
1600
800
50
V
DRM
-
40
I
TM
Units
4960
2420
1370
680
50
-
55
V
A/µs
°C
A
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST183C..C
370 (130)
55 (85)
690
4900
5130
4120
4310
Units
A
°C
Conditions
180° conduction, half sine wave
double side (single side) cooled
DC@ 25°C heatsink temperature double side cooled
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I t
2
Maximum I t for fusing
2
120
110
85
78
KA
2
s
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
1200
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
2
www.irf.com
ST183C..C Series
Bulletin I25178 rev. B 04/00
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
Low level value of forward
slope resistance
t
2
ST183C..C Units
1.80
1.40
1.45
0.67
mΩ
0.58
600
1000
mA
V
Conditions
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
V
T(TO)1
Low level value of threshold
High level value of forward
slope resistance
Maximum holding current
Typical latching current
I
H
I
L
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST183C..C
1000
1.1
Min
10
Max
20
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
µs
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST183C..C
500
40
Units
V/µs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST183C..C
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST183C..C Series
Bulletin I25178 rev. B 04/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST183C..C
-40 to 125
-40 to 150
0.17
0.08
0.033
0.017
4900
(500)
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
K/W
wt
Approximate weight
Case style
50
TO - 200AB (A-PUK)
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
Single Side Double Side
0.015
0.018
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
Rectangular conduction
Single Side Double Side
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
Units
Conditions
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
18
2
3
3
C
4
08
5
C
6
H
7
K
8
1
9
10
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (A-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
dv/dt - t
q
combinations available
50
DN
DM
DL
DP
DK
100
EN
EM
EL
EP
EK
200
FN*
FM
FL*
FP
FK
400
HN
HM
HL
HP
HK
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
dv/dt (V/µs)
20
10
CN
12
CM
t (µs)
15
CL
q
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
18
CP
20
CK
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
*
Standard part number.
All other types available only on request.
4
www.irf.com
ST183C..C Series
Bulletin I25178 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
Maxim um Allowable Heatsin k Tem perature (°C)
130
120
110
100
90
80
70
60
50
40
0
40
80
M a xim u m A llo w a b le H e a t sin k T e m p e ra t u re (°C )
ST183C..C Series
(Single Side Cooled)
R
thJ-h s
(DC) = 0.17 K/W
130
120
110
100
90
80
70
60
50
40
30
20
0
50
30°
S T 1 8 3 C ..C Se rie s
(S in g le Sid e C o o le d )
R
th J- hs
(D C ) = 0 .1 7 K / W
C o nd uctio n A ng le
C on duc tion Pe rio d
30°
60°
60 °
90 °
1 20°
1 80°
DC
10 0 15 0 20 0 2 50 30 0 35 0 4 00
90°
180°
120°
200
240
120
160
Average O n-state Current (A)
Fig. 1 - Current Ratings Characteristics
A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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5
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ST183C04CFN0 Related Products

ST183C04CFN0 ST183C04CFL0 ST183C08CFL0
Description Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3 Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3 Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
Is it Rohs certified? incompatible incompatible incompatible
Maker International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ）
Parts packaging code BUTTON BUTTON BUTTON
package instruction DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2
Contacts 3 3 3
Manufacturer packaging code A-PUK A-PUK A-PUK
Reach Compliance Code compliant compliant compliant
Other features HIGH SPEED HIGH SPEED HIGH SPEED
Shell connection ISOLATED ISOLATED ISOLATED
Nominal circuit commutation break time 10 µs 15 µs 15 µs
Configuration SINGLE SINGLE SINGLE
Maximum DC gate trigger current 200 mA 200 mA 200 mA
Maximum DC gate trigger voltage 3 V 3 V 3 V
Maximum holding current 600 mA 600 mA 600 mA
JEDEC-95 code TO-200AB TO-200AB TO-200AB
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
JESD-609 code e0 e0 e0
Maximum leakage current 40 mA 40 mA 40 mA
On-state non-repetitive peak current 5130 A 5130 A 5130 A
Number of components 1 1 1
Number of terminals 2 2 2
Maximum on-state current 370000 A 370000 A 370000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 690 A 690 A 690 A
Maximum repetitive peak off-state leakage current 40000 µA 40000 µA 40000 µA
Off-state repetitive peak voltage 400 V 400 V 800 V
Repeated peak reverse voltage 400 V 400 V 800 V
surface mount YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR

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