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Datasheet> All Categories > Wireless rf/communication> Telecom circuit> RF7163TR13
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RF7163TR13

Description
RF and Baseband Circuit, CMOS, ROHS COMPLIANT, MODULE-23
CategoryWireless rf/communication    Telecom circuit   
File Size1MB，22 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
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RF7163TR13 Overview

RF and Baseband Circuit, CMOS, ROHS COMPLIANT, MODULE-23

RF7163TR13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQorvo
package instructionQCCN, LCC22(UNSPEC)
Reach Compliance Codecompliant
ECCN code5A991.G
JESD-30 codeR-XXMA-N23
length6.63 mm
Number of functions1
Number of terminals23
Package body materialUNSPECIFIED
encapsulated codeQCCN
Encapsulate equivalent codeLCC22(UNSPEC)
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.5 V
Certification statusNot Qualified
Maximum seat height1.015 mm
Maximum slew rate0.00008 mA
Nominal supply voltage3.5 V
surface mountYES
technologyCMOS
Telecom integrated circuit typesRF AND BASEBAND CIRCUIT
Terminal formNO LEAD
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
width5.24 mm

RF7163TR13 Preview

RF7163Quad-
Band
GSM850/EGS
M900/DCS18
00/
RF7163
QUAD-BAND GSM850/EGSM900/DCS1800/
PCS1900 TRANSMIT MODULE
Package: Module 6.63mmx5.24mm1.0mm
GND
GND
GND
RX1
RX2
GND 1
22
21
20
19
18
17
Features
RFIN HB
2
RX3
16 RX4
Amplifier
Switch
ESD
Protection
15 ANTENNA
Enhanced Performance
Transmit Module
No External Routing
High Efficiency at Rated P
OUT
V
BATT
=3.5V
GSM850=40%
EGSM900=40%
DCS1800=34%
PCS1900=36%
Low RX Insertion Loss
Four Symmetrical RX Ports
0dBm to 6dBm Drive Level,
>50dB of Dynamic Range
Integrated Power Flattening
Circuit
V
BATT
Tracking Circuit
3V Quad-Band GSM/GPRS
Handsets
GSM850/EGSM900/DCS180
0/PCS1900 Products
GPRS Class 12 Compliant
Portable Battery-Powered
Equipment
GND 3
RFIN LB
4
14 GND
13 GND
GND 5
CMOS Controller
GND 6
7
8
9
10
11
12
TX ENABLE
VRAMP
VBATT
GPCTRL0
Functional Block Diagram
Product Description
The RF7163 is a quad-band (GSM850/EGSM900/DCS1800/PCS1900) GSM/GPRS, Class 12
compliant transmit module with four interchangeable receive ports. This transmit module
builds upon RFMD’s leading power amplifier with PowerStar® integrated power control technol-
ogy, pHEMT switch technology, and integrated transmit filtering for best-in-class harmonic per-
formance. The results are high performance, reduced solution size, and ease of
implementation. The device is designed for use as the final portion of the transmitter section in
a GSM850/EGSM900/DCS1800/PCS1900 handset and eliminates the need for a PA-to-
antenna switch module matching network.
The RF7163 features RFMD’s latest integrated power-flattening circuit which significantly
reduces current and power variation into load mismatch. Additionally, a V
BATT
tracking feature is
incorporated to maintain switching performance as supply voltage decreases. The RF7163 also
integrates an ESD filter to provide excellent ESD protection at the antenna port. The RF7163 is
designed to provide maximum efficiency at rated P
OUT
.
Applications
Ordering Information
RF7163
RF7163SB
RF7163PCBA-41X
Quad-Band GSM850/EGSM900/DCS1800/PCS1900 Trans-
mit Module
Transmit Module 5-Piece Sample Pack
Fully Assembled Evaluation Board
GaAs HBT
GaAs MESFET
InGaP HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GPCTRL1
GaAs pHEMT
Si CMOS
Si BJT
GPCTRL2
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100121
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 22
RF7163
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
RAMP
)
Input RF Power
Max Duty Cycle
Output Load VSWR
Operating Case Temperature
Storage Temperature
Rating
-0.3 to +6.0
-0.3 to +1.8
+10
50
20:1
-20 to +85
-55 to +150
Unit
V
V
dBm
%
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
ESD
ESD RF Ports
ESD Antenna Port
ESD Any Other Port
Min.
Specification
Typ.
Max.
1000
1000
8
1000
1000
Unit
V
V
kV
V
V
V
V
pF
A
dB
Condition
HBM, JESD22-A114
CDM, JEDEC JESD22-C101
IEC 61000-4-2
HBM, JESD22-A114
CDM, JEDEC JESD22-C101
Max. P
OUT
Min. P
OUT
DC to 200kHz
V
RAMP
=V
RAMP, MAX
V
RAMP
=0.25V to V
RAMP, MAX
Operating Limits
P
IN
<-30dBm, TX Enable=Low, V
RAMP
=0.25V,
Temp=-20°C to +85°C, V
BATT
=4.8V.
Overall Power Control V
RAMP
Power Control “ON”
Power Control “OFF”
V
RAMP
Input Capacitance
V
RAMP
Input Current
Power Control Range
50
3.0
3.5
40
4.8
80
0.25
15
20
10
1.8
Overall Power Supply
Power Supply Voltage
Power Supply Current
V
A
Overall Control Signals
GpCtrl0/1/2 “Low”
GpCtrl0/1/2 “High”
GpCtrl0/1/2 “High Current”
TX Enable “Low”
TX Enable “High”
TX Enable “High Current”
RF Port Input and Output Imped-
ance
0
1.25
0
1.25
0
2.0
1
0
2.0
1
50
0.5
VBATT
2
0.5
VBATT
2
V
V
A
V
V
A
2 of 22
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100121
RF7163
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions unless otherwise stated.
All unused ports are terminated. V
BATT
=3.5V,
P
IN
=3dBm, Temp=+25°C, TX Enable=High,
VRAMP=1.8V. TX Mode: GpCtrl2=Low,
GpCtrl1=High, GpCtrl0=Low, Duty Cycle=25%,
Pulse Width=1154S
824
0
33
31
3
2:1
33.7
33.7
849
6
2.5:1
dBm
dBm
MHz
dBm
Full P
OUT
guaranteed at minimum drive level.
Over P
OUT
range (5dBm to 33dBm)
Nominal conditions.
V
BATT
=3.1V to 4.8V, P
IN
=0dBm to 6dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308mS, V
RAMP
<1.8V.
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation margin.
Set V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm
V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm.
V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm, also
over all power levels (5dBm to 33dBm).
TX Enable Low, P
IN
=6dBm, V
RAMP
=0.25V.
TX Enable High, P
IN
=6dBm, V
RAMP
=0.25V.
869MHz to 894MHz. V
RAMP
=V
RAMP RATED
for
P
OUT
=33dBm, RBW=100kHz.
1930MHz to 1990MHz. V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm, RBW=100kHz.
VSWR=12:1, all phase angles (Set
V
RAMP=VRAMP RATED
for P
OUT
<33dBm into 50
load; load switched to VSWR=12:1).
VSWR=20:1, all phase angles (Set
V
RAMP=VRAMP RATED
for P
OUT
<33dBm into 50
load; load switched to VSWR=20:1).
GSM850 Band
Operating Frequency Range
Input Power
Input VSWR
Maximum Output Power
Minimum Power Into 3:1 VSWR
30
31.5
dBm
Efficiency
2nd Harmonic
36
40
-40*
-33
%
dBm
3rd Harmonic
-40*
-33
dBm
All other harmonics up to
12.75GHz
Non-harmonic Spurious up to
12.75GHz
Forward Isolation 1
Forward Isolation 2
Output Noise Power
-40
-33
-36
dBm
dBm
dBm
dBm
dBm
dBm
dBm
-57
-27
-87.5
-118
-41
-15
-82
-74
-36
Output Load VSWR Stability
(Spurious Emissions)
Output Load VSWR Ruggedness
No damage or permanent degradation to
device
DS100121
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 22
RF7163
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions unless otherwise stated.
All unused ports are terminated. V
BATT
=3.5V,
P
IN
=3dBm, Temp=+25°C, TX Enable=High,
VRAMP=1.8V. TX Mode: GpCtrl2=Low,
GpCtrl1=High, GpCtrl0=Low, Duty Cycle=25%,
Pulse Width=1154S
880
0
33
31
3
2:1
33.7
33.7
915
6
2.5:1
dBm
dBm
MHz
dBm
Full P
OUT
guaranteed at minimum drive level.
Over P
OUT
range (5dBm to 33dBm).
Nominal conditions.
V
BATT
=3.1V to 4.8V, P
IN
=0dBm to 6dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308mS, V
RAMP
<1.8V.
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation margin.
V
BATT
=3.7V.
Set V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm
V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm.
V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm, also
over all power levels (5dBm to 33dBm).
TX Enable Low, P
IN
=6dBm, V
RAMP
=0.25V.
TX Enable High, P
IN
=6dBm, V
RAMP
=0.25V.
925MHz to 935MHz. V
RAMP
=V
RAMP RATED
for
P
OUT
=33dBm, RBW=100kHz.
935MHz to 960MHz. V
RAMP
=V
RAMP RATED
for
P
OUT
=33dBm, RBW=100kHz.
1805MHz to 1880MHz. V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm, RBW=100kHz.
VSWR=12:1, all phase angles (Set
V
RAMP=VRAMP RATED
for P
OUT
<33dBm into 50
load; load switched to VSWR=12:1).
VSWR=20:1, all phase angles (Set
V
RAMP=VRAMP RATED
for P
OUT
<33dBm into 50
load; load switched to VSWR=20:1).
EGSM900 Band
Operating Frequency Range
Input Power
Input VSWR
Maximum Output Power
Minimum Power Into 3:1 VSWR
30
31.5
dBm
Efficiency
2nd Harmonic
36
40
-40*
-33
%
dBm
3rd Harmonic
-40*
-33
dBm
All other harmonics up to
12.75GHz
Non-harmonic Spurious up to
12.75GHz
Forward Isolation 1
Forward Isolation 2
Output Noise Power
-40
-33
-36
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
-60
-27
-86
-86
-118
-41
-15
-77
-83
-87
-36
Output Load VSWR Stability
(Spurious Emissions)
Output Load VSWR Ruggedness
No damage or permanent degradation to
device
4 of 22
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100121
RF7163
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions unless otherwise stated.
All unused ports are terminated. V
BATT
=3.5V,
P
IN
=3dBm, Temp=+25°C, TX Enable=High,
VRAMP=1.8V. TX Mode: GpCtrl2=Low,
GpCtrl1=High, GpCtrl0=High, Duty
Cycle=25%, Pulse Width=1154S
1710
0
30
28
3
1.3:1
31.6
31.6
1785
6
2.5:1
dBm
dBm
MHz
dBm
Full P
OUT
guaranteed at minimum drive level.
Over P
OUT
range (0dBm to 30dBm).
Nominal conditions.
V
BATT
=3.0V to 4.8V, P
IN
=0dBm to 6dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308mS, V
RAMP
<1.8V.
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation margin.
V
BATT
=3.7V.
Set V
RAMP
=V
RAMP RATED
for P
OUT
=30dBm
V
RAMP
=V
RAMP RATED
for P
OUT
=30dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP RATED
for P
OUT
=30dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
VRAMP=VRAMP_RATED. *Typical value mea-
sured from worst case harmonic frequency
across the band. External low pass filter can be
used to attenuate the higher order harmonics.
(See Application Schematic for suggested fil-
ter.)
V
RAMP
=V
RAMP RATED
for P
OUT
=30dBm.
V
RAMP
=V
RAMP RATED
for P
OUT
=30dBm, also
over all power levels (5dBm to 33dBm).
TX Enable Low, P
IN
=6dBm, V
RAMP
=0.25V.
TX Enable High, P
IN
=6dBm, V
RAMP
=0.25V.
925MHz to 935MHz. V
RAMP
=V
RAMP RATED
for
P
OUT
=33dBm, RBW=100kHz.
935MHz to 960MHz. V
RAMP
=V
RAMP RATED
for
P
OUT
=33dBm, RBW=100kHz.
1805MHz to 1880MHz. V
RAMP
=V
RAMP RATED
for P
OUT
=33dBm, RBW=100kHz.
VSWR=12:1, all phase angles (Set
V
RAMP=VRAMP RATED
for P
OUT
<30dBm into 50
load; load switched to VSWR=12:1).
VSWR=20:1, all phase angles (Set
V
RAMP=VRAMP RATED
for P
OUT
<30dBm into 50
load; load switched to VSWR=20:1).
DCS1800 Band
Operating Frequency Range
Input Power
Input VSWR
Maximum Output Power
Minimum Power Into 3:1 VSWR
27
28.5
dBm
Efficiency
2nd Harmonic
32
34
-40*
-33
%
dBm
3rd Harmonic
-40*
-33
dBm
4th Harmonic
-36*
-28
dBm
All other harmonics up to
12.75GHz
Non-harmonic Spurious up to
12.75GHz
Forward Isolation 1
Forward Isolation 2
Output Noise Power
-40
-33
-36
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
-62
-27
-101
-100
-93
-53
-15
-77
-83
-79
-36
Output Load VSWR Stability
(Spurious Emissions)
Output Load VSWR Ruggedness
No damage or permanent degradation to
device
DS100121
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 22
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RF7163TR13 Related Products

RF7163TR13 RF7163SB RF7163TR7 RF7163 RF7163SR
Description RF and Baseband Circuit, CMOS, ROHS COMPLIANT, MODULE-23 RF and Baseband Circuit, CMOS, ROHS COMPLIANT, MODULE-23 RF and Baseband Circuit, CMOS, ROHS COMPLIANT, MODULE-23 RF and Baseband Circuit, CMOS, ROHS COMPLIANT, MODULE-23 Telecom IC, PQCC22,
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Qorvo Qorvo Qorvo Qorvo Qorvo
package instruction QCCN, LCC22(UNSPEC) QCCN, LCC22(UNSPEC) QCCN, LCC22(UNSPEC) QCCN, LCC22(UNSPEC) QCCN, LCC22(UNSPEC)
Reach Compliance Code compliant compliant compliant compliant compliant
Number of terminals 23 23 23 23 22
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED PLASTIC/EPOXY
encapsulated code QCCN QCCN QCCN QCCN QCCN
Encapsulate equivalent code LCC22(UNSPEC) LCC22(UNSPEC) LCC22(UNSPEC) LCC22(UNSPEC) LCC22(UNSPEC)
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY CHIP CARRIER
power supply 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum slew rate 0.00008 mA 0.00008 mA 0.00008 mA 0.00008 mA 0.08 mA
Nominal supply voltage 3.5 V 3.5 V 3.5 V 3.5 V 3.5 V
surface mount YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED QUAD
ECCN code 5A991.G 5A991.G 5A991.G 5A991.G -
JESD-30 code R-XXMA-N23 R-XXMA-N23 R-XXMA-N23 R-XXMA-N23 -
length 6.63 mm 6.63 mm 6.63 mm 6.63 mm -
Number of functions 1 1 1 1 -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maximum seat height 1.015 mm 1.015 mm 1.015 mm 1.015 mm -
technology CMOS CMOS CMOS CMOS -
Telecom integrated circuit types RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT RF AND BASEBAND CIRCUIT -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
width 5.24 mm 5.24 mm 5.24 mm 5.24 mm -

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