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T12M35T800B

Description
TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB, LEAD FREE PACKAGE-3
CategoryAnalog mixed-signal IC    Trigger device   
File Size202KB,5 Pages
ManufacturerLITEON
Websitehttp://optoelectronics.liteon.com/en-global/Home/index
Environmental Compliance  
Lite-On began producing LED lamps in 1975; the company has steadily grown to become one of the world's largest manufacturers of optoelectronics products by providing customers with visible and infrared product solutions. High-volume production of commercial and application-specific products, as well as strong R&D and vertical integration capabilities have proven to be key and differentiating factors in Lite-On's success.
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T12M35T800B Overview

TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB, LEAD FREE PACKAGE-3

T12M35T800B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerLITEON
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)255
Certification statusNot Qualified
Maximum rms on-state current12 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeTRIAC

T12M35T800B Preview

LITE-ON
SEMICONDUCTOR
T12M35T-B SERIES
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
Triacs
Sillicon Bidirectional Thyristors
TO-220AB
FEATURES
Blocking Voltage to 800 Volts
Uniform Gate Trigger Currents in Three Quadrants, Q1,
Q2, and Q3
High Immunity to dv/dt — 400 V/us Min. at 125
High Surge Current Capability — 100 Amperes
Pb Free Package
B
C
D
K
PIN
1
2
3
L
M
A
E
F
G
I
J
N
TO-220AB
DIM.
MAX.
MIN.
14.22
15.88
A
10.67
B
9.65
3.43
C
2.54
D
6.86
5.84
9.28
E
8.26
6.35
F
-
14.73
12.70
G
H
2.29
2.79
0.51
1.14
I
J
0.40
0.67
K
3.53
4.09
3.56
4.83
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
MAXIMUM RATINGS
(Tj= 25
unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (1) (T
J
= -40 to 110
, Sine Wave, 50 to 60 Hz; Gate Open)
T12M35T600B
T12M35T800B
V
DRM
,
V
RRM
600
800
Volts
Symbol
Value
Unit
On-State RMS Current (T
C
= +70
) Full Cycle Sine Wave 50 to 60 Hz
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz,
T
J
= +25
)
Preceded and followed by rated current.
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power (T
c
= +80
,
Tp
1.0 us)
Average Gate Power (T
c
= +80
,
t=8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
12
100
41
16
0.35
-40 to +125
-40 to +150
Amp
Amps
A
2
s
Watt
Watt
T
J
Tstg
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV. 1, Mar-2007,KTXC24
RATING AND CHARACTERISTIC CURVES
T12M35T-B SERIES
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
Symbol
R
thJC
R
thJA
Value
2.2
62.5
260
Unit
/
W
T
L
ELECTRICAL CHARACTERISTICS
(T
j
=25
unless otherwise noted, Electrical apply in both directions)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(V
D
=Rated V
DRM,
V
RRM;
Gate Open)
T
J
=25
T
J
=125
I
DRM
I
RRM
----
----
----
----
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage
(I
TM=
± 17A Peak @Tp
2.0 ms, Duty Cycle
2%)
V
TM
----
----
1.85
Volts
Gate Trigger Current (Continuous dc)
(V
D
= 12Vdc; R
L
= 100 Ohms)
I
GT1
I
GT2
I
GT3
5.0
5.0
5.0
13
13
13
35
35
35
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc; R
L
=100 Ohms)
V
GT1
VGT2
VGT3
0.5
0.5
0.5
0.78
0.70
0.71
1.5
1.5
1.5
Volts
Holding Current
(V
D
= 12 V, Initiating Current = ± 150 mA, Gate Open)
I
H
----
----
----
----
20
20
30
20
40
50
80
50
mA
Latching Current (V
D
= 24 V, I
G
= 35 mA)
I
L
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutation Current
(V
D
= Rated VDRM , I
TM
= 4.4 A, Commutating dv/dt = 18 V/ms, Gate
Unenergized,T
J
=
125
, f = 250 Hz,No
Snubber)
Critical Rate of Rise of Commutation Voltage
(V
D
= 67% VDRM, Exponential Waveform, Gate Open, T
J
=
125
)
Repetitive Critical Rate of Rise of On-State Current
(IPK = 50 A; PW = 40 usec; diG/dt = 0.2 A/usec;f = 60 Hz)
di/dt(c)
6.5
----
----
A/ms
dv/dt
400
----
----
V/us
di/dt
----
----
10
A/us
RATING AND CHARACTERISTIC CURVES
T12M35T-B SERIES
Quadrant Definitions
All polarities are referenced to MT1
Whith in -phase signal (using standard AC lines) quadrants I and III are used
RATING AND CHARACTERISTIC CURVES
T12M35T-B SERIES
Figure 1. Typical Gate Trigger Current)
versus Junction Temperature
100
1.10
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
V
GT
,GATE TRIGGER VOLTAGE (VOLTS)
I
GT
,GATE TRIGGER CURRENT(mA)
1.00
Q3
Q3
Q2
Q1
10
0.90
Q1
Q2
0.80
0.70
0.60
0.50
1
-40
-25
-10
5
20
35
50
65
80
o
95
110
125
0.40
-40
-25
-10
5
20
35
50
65
80
o
95
110
125
T
J
,JUNCTION TEMPERATURE( C)
Figure 3. Typical Holding Current
versus Junction Temperature
100
100
T
J
,JUNCTION TEMPERATURE( C)
Figure 4. Typical Latching Current
versus Junction Temperature
I
H
,HOLDING CURRENT(mA)
LATCHING CURRENT(mA)
MT2 Positive
Q2
Q1
10
10
Q3
MT2 Negative
1
-40
-25
-10
5
20
35
50
65
80
o
95
110
125
T
J
,JUNCTION TEMPERATURE( C)
1
-40
-25
-10
5
20
35
50
65
80
o
95
110
125
T
J
,JUNCTION TEMPERATURE( C)
Figure 6. On-State Power Dissipation
P
(AV)
,AVERAGE POWER DIDDIPATION(WATTS)
20
Figure 5. Typical RMS Current Derating
125
DC
18
120° ,90° ,60° ,30°
T
C
,CASE TEMPERATURE( C)
180°
16
o
110
120°
14
12
10
8
95
180°
80
90°
6
60°
4
30°
2
0
0
2
4
6
8
10
12
DC
65
0
2
4
6
8
10
12
I
T(RMS)
,RMS ON- STATE CURRENT(AMPS)
I
T(AV)
,AVERAGEON-STATE CURRENT(AMPS)
RATING AND CHARACTERISTIC CURVES
T12M35T-B SERIES
Figure 7. Typical On-State Characteristics
I
T
,INSTANTANEOUS ON-STATE CURRENT(AMPS)
100
Figure 8. Typical Thermal Response
r(t),TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
5.0
1
Typical@ T
J
= 25℃
10
Maximun @ T
J
= 110℃
0.1
1
Maximun @ T
J
= 25℃
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.01
0.1
1
10
100
1000
10000
V
T
,INSTANTANEOUS ON-STATE VOLTAGE(VOLTS)
t,TIME(ms)
Specifications mentioned in this publication are subject to change without notice.
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