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MCM67M518AFN10

Description
Cache SRAM, 32KX18, 10ns, BICMOS, PQCC52, PLASTIC, LCC-52
Categorystorage    storage   
File Size552KB,9 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MCM67M518AFN10 Overview

Cache SRAM, 32KX18, 10ns, BICMOS, PQCC52, PLASTIC, LCC-52

MCM67M518AFN10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionPLASTIC, LCC-52
Reach Compliance Codeunknown
ECCN code3A991.B.2.B
Maximum access time10 ns
Other featuresSELF-TIMED WRITE; BURST COUNTER; BYTE WRITE
I/O typeCOMMON
JESD-30 codeS-PQCC-J52
JESD-609 codee0
length19.1262 mm
memory density589824 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of ports1
Number of terminals52
word count32768 words
character code32000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX18
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC52,.8SQ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height4.57 mm
Maximum standby current0.075 A
Minimum standby current4.75 V
Maximum slew rate0.265 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyBICMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width19.1262 mm

MCM67M518AFN10 Related Products

MCM67M518AFN10 MCM67M518AFN8.5
Description Cache SRAM, 32KX18, 10ns, BICMOS, PQCC52, PLASTIC, LCC-52 Cache SRAM, 32KX18, 8.5ns, BICMOS, PQCC52, PLASTIC, LCC-52
Is it Rohs certified? incompatible incompatible
package instruction PLASTIC, LCC-52 PLASTIC, LCC-52
Reach Compliance Code unknown unknown
ECCN code 3A991.B.2.B 3A991.B.2.B
Maximum access time 10 ns 8.5 ns
Other features SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE
I/O type COMMON COMMON
JESD-30 code S-PQCC-J52 S-PQCC-J52
JESD-609 code e0 e0
length 19.1262 mm 19.1262 mm
memory density 589824 bit 589824 bit
Memory IC Type CACHE SRAM CACHE SRAM
memory width 18 18
Number of functions 1 1
Number of ports 1 1
Number of terminals 52 52
word count 32768 words 32768 words
character code 32000 32000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 32KX18 32KX18
Output characteristics 3-STATE 3-STATE
Exportable YES YES
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code QCCJ QCCJ
Encapsulate equivalent code LDCC52,.8SQ LDCC52,.8SQ
Package shape SQUARE SQUARE
Package form CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V
Certification status Not Qualified Not Qualified
Maximum seat height 4.57 mm 4.57 mm
Maximum standby current 0.075 A 0.075 A
Minimum standby current 4.75 V 4.75 V
Maximum slew rate 0.265 mA 0.29 mA
Maximum supply voltage (Vsup) 5.25 V 5.25 V
Minimum supply voltage (Vsup) 4.75 V 4.75 V
Nominal supply voltage (Vsup) 5 V 5 V
surface mount YES YES
technology BICMOS BICMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form J BEND J BEND
Terminal pitch 1.27 mm 1.27 mm
Terminal location QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
width 19.1262 mm 19.1262 mm
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