CJD41C datasheet, PDF - EEWORLD Datasheet

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CJD41C: DescriptionSURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size428KB，3 Pages; ManufacturerCentral Semiconductor

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CJD41C Overview

SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

CJD41C Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	DPAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	20 W
Maximum power dissipation(Abs)	20 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
VCEsat-Max	1.5 V
Base Number Matches	1

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CJD41C NPN

CJD42C PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

POWER TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD41C, CJD42C

types are Complementary Silicon Power Transistors

manufactured by the epitaxial base process, mounted

in a surface mount package designed for power

amplifier and high speed switching applications.

MARKING: FULL PART NUMBER

DPAK TRANSISTOR CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (TA=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

TJ, Tstg

Θ

JC

Θ

JA

100

5.0

6.0

10

2.0

20

1.75

-65 to +150

6.25

71.4

UNITS

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICEO

ICES

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

fT

hfe

VCE=60V

VCE=100V

VEB=5.0V

IC=30mA

IC=6.0A, IB=600mA

VCE=4.0V, IC=6.0A

VCE=4.0V, IC=300mA

VCE=4.0V, IC=3.0A

VCE=10V, IC=500mA, f=1.0MHz

VCE=10V, IC=500mA, f=1.0kHz

100

MAX

50

10

500

1.5

2.0

UNITS

µA

V

30

15

3.0

20

75

MHz

R2 (4-January 2010)

CJD41C Related Products

	CJD41C	CJD41C_10	CJD42C
Description	SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS	SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS	SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS
Is it lead-free?	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	-	incompatible
package instruction	DPAK-3	-	DPAK-3
Contacts	3	-	3
Reach Compliance Code	not_compliant	-	_compli
ECCN code	EAR99	-	EAR99
Shell connection	COLLECTOR	-	COLLECTOR
Maximum collector current (IC)	6 A	-	6 A
Collector-emitter maximum voltage	100 V	-	100 V
Configuration	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	15	-	15
JESD-30 code	R-PSSO-G2	-	R-PSSO-G2
JESD-609 code	e0	-	e0
Number of components	1	-	1
Number of terminals	2	-	2
Maximum operating temperature	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	NPN	-	PNP
Maximum power consumption environment	20 W	-	20 W
Maximum power dissipation(Abs)	20 W	-	20 W
Certification status	Not Qualified	-	Not Qualified
surface mount	YES	-	YES
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	GULL WING
Terminal location	SINGLE	-	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON
Nominal transition frequency (fT)	3 MHz	-	3 MHz
VCEsat-Max	1.5 V	-	1.5 V
Base Number Matches	1	-	1

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