BAW100 datasheet, PDF - EEWORLD Datasheet

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BAW100: Description0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size444KB，3 Pages; ManufacturerCentral Semiconductor

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BAW100 Overview

0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAW100 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	ANODE
Configuration	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.715 V
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	2
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	85 V
Maximum reverse current	50 µA
Maximum reverse recovery time	0.006 µs
Reverse test voltage	75 V
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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BAW100

BAW100G

SURFACE MOUNT

DUAL, ISOLATED HIGH SPEED

SILICON SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BAW100 and

BAW100G each consist of two electrically isolated high

speed silicon switching diodes packaged in an epoxy

molded SOT-143 surface mount case. This device is

designed for high speed switching applications.

•

The BAW100G is

Halogen Free

by design.

MARKING CODES:

BAW100:

CJSS

BAW100G: CJSG

SYMBOL

VRRM

IFRM

IFSM

TJ, Tstg

250

500

4.0

2.0

1.0

350

-65 to +150

357

UNITS

°C

°C/W

UNITS

μA

715

855

1.00

1.25

2.0

6.0

SOT-143 CASE

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0ms

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

BVR

trr

VR=25V, TA=150°C

VR=75V

VR=75V, TA=150°C

IR=100μA

IF=1.0mA

IF=10mA

IF=50mA

IF=150mA

VR=0, f=1.0MHz

IF=IR=10mA, RL=100Ω, Rec. to 1.0mA

1.0

R4 (20-November 2009)

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