2N3507 datasheet, PDF - EEWORLD Datasheet

2N3507: Description3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5; CategoryDiscrete semiconductor The transistor; File Size277KB，6 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Maximum off time (toff)	90 ns
Maximum opening time (tons)	45 ns
Base Number Matches	1

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