7MP4104S25Z datasheet, PDF - EEWORLD Datasheet

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7MP4104S25Z: DescriptionSRAM Module, 1MX32, 25ns, CMOS, PZIP80; Categorystorage storage; File Size299KB，6 Pages; ManufacturerIDT (Integrated Device Technology)

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7MP4104S25Z Overview

SRAM Module, 1MX32, 25ns, CMOS, PZIP80

7MP4104S25Z Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
package instruction	ZIP, ZIP80(UNSPEC)
Reach Compliance Code	not_compliant
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-PZIP-T80
JESD-609 code	e0
memory density	33554432 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of terminals	80
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	ZIP
Encapsulate equivalent code	ZIP80(UNSPEC)
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum standby current	0.08 A
Minimum standby current	4.5 V
Maximum slew rate	1.2 mA
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	30

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7MP4104S25Z Related Products

	7MP4104S25Z	7MP4104S25M	7MP4104S35M	7MP4104S20M	7MP4104S35Z	7MP4104S20Z
Description	SRAM Module, 1MX32, 25ns, CMOS, PZIP80	SRAM Module, 1MX32, 25ns, CMOS, PSMA80	SRAM Module, 1MX32, 35ns, CMOS, PSMA80	SRAM Module, 1MX32, 20ns, CMOS, PSMA80	SRAM Module, 1MX32, 35ns, CMOS, PZIP80	SRAM Module, 1MX32, 20ns, CMOS, PZIP80
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
package instruction	ZIP, ZIP80(UNSPEC)	SIMM, SSIM80	SIMM, SSIM80	SIMM, SSIM80	ZIP, ZIP80(UNSPEC)	ZIP, ZIP80(UNSPEC)
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
Maximum access time	25 ns	25 ns	35 ns	20 ns	35 ns	20 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PZIP-T80	R-PSMA-N80	R-PSMA-N80	R-PSMA-N80	R-PZIP-T80	R-PZIP-T80
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	32	32	32	32	32	32
Number of terminals	80	80	80	80	80	80
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	1MX32	1MX32	1MX32	1MX32	1MX32	1MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	ZIP	SIMM	SIMM	SIMM	ZIP	ZIP
Encapsulate equivalent code	ZIP80(UNSPEC)	SSIM80	SSIM80	SSIM80	ZIP80(UNSPEC)	ZIP80(UNSPEC)
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.08 A	0.08 A	0.08 A	0.08 A	0.08 A	0.08 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	1.2 mA	1.2 mA	1.2 mA	1.2 mA	1.2 mA	1.2 mA
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	NO LEAD	NO LEAD	NO LEAD	THROUGH-HOLE	THROUGH-HOLE
Terminal location	ZIG-ZAG	SINGLE	SINGLE	SINGLE	ZIG-ZAG	ZIG-ZAG
Maximum time at peak reflow temperature	30	30	30	30	30	30

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