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CJD13003TR13

Description
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size45KB,2 Pages
ManufacturerCentral Semiconductor
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CJD13003TR13 Overview

Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,

CJD13003TR13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codenot_compliant
Shell connectionCOLLECTOR
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment15 W
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
Maximum off time (toff)4700 ns
Maximum opening time (tons)1100 ns
VCEsat-Max3 V

CJD13003TR13 Related Products

CJD13003TR13 CJD13003BKLEADFREE CJD13003BK CJD13003TR13LEADFREE
Description Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,
Is it lead-free? Contains lead Lead free Contains lead Lead free
Is it Rohs certified? incompatible conform to incompatible conform to
Reach Compliance Code not_compliant compliant not_compliant compliant
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1.5 A 1.5 A 1.5 A 1.5 A
Collector-emitter maximum voltage 400 V 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 5 5 5 5
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e3 e0 e3
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT SPECIFIED 260
Polarity/channel type NPN NPN NPN NPN
Maximum power consumption environment 15 W 15 W 15 W 15 W
Maximum power dissipation(Abs) 15 W 15 W 15 W 15 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 10 NOT SPECIFIED 10
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz 4 MHz 4 MHz
Maximum off time (toff) 4700 ns 4700 ns 4700 ns 4700 ns
Maximum opening time (tons) 1100 ns 1100 ns 1100 ns 1100 ns
VCEsat-Max 3 V 3 V 3 V 3 V
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