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ZVN3310A

Description
200 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size78KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZVN3310A Overview

200 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZVN3310A Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage100 V
Processing package descriptionTO-92 COMPATIBLE, E-LINE PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
terminal coatingMATTE TIN
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption0.6250 W
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current0.2000 A
feedback capacitor5 pF
Maximum drain on-resistance10 ohm
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 10Ω
ZVN3310A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
200
2
±
20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
100
40
15
5
5
7
6
7
500
10
100
0.8
2.4
20
1
50
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=500mA
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=500mA
V
DS
=25V,I
D
=500mA
Forward Transconductance(1)(2 g
fs
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
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