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DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
FEATURES
•
High DC current gain: h
FE2
= 200 TYP.
1.6 ± 0.1
•
High voltage: V
CEO
= 50 V
•
Can be automatically mounted
0.8 ± 0.1
3
0 to 0.1
2
1
0.2
+0.1
–0
ORDERING INFORMATION
PART NUMBER
2SC4783
PACKAGE
SC-75 (USM)
0.5
0.5
0.6
0.75 ± 0.05
1.0
1.6 ± 0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Notes 1.
PW
≤
10 ms, Duty Cycle
≤
50%
2
2.
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
1: Emitter
2: Base
3: Collector
V
CBO
V
CEO
V
EBO
I
C(DC)
60
50
5.0
100
200
200
150
–55 to + 150
V
V
V
mA
mA
mW
°C
°C
Note1
I
C(pulse)
P
T
T
j
T
stg
Note2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15616EJ2V0DS00 (2nd edition)
Date Published October 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
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