100A, 60V, 0.0078ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZP, TO-263, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| Parts packaging code | D2PAK |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 420 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (ID) | 100 A |
| Maximum drain-source on-resistance | 0.0078 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum pulsed drain current (IDM) | 300 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| NP100P06PLG | NP100P06PLG-E1-AY | NP100P06PLG-E2-AY | |
|---|---|---|---|
| Description | 100A, 60V, 0.0078ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZP, TO-263, 3 PIN | MOSFET P-CH 60V 100A TO-263 | Pch Single Power MOSFET -60V -100A 6.0mohm MP-25ZP/TO-263 Automotive |
| Is it Rohs certified? | incompatible | conform to | conform to |
| Maker | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation |
| Parts packaging code | D2PAK | MP-25ZP | MP-25ZP |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 4 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 420 mJ | 420 mJ | 420 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V | 60 V | 60 V |
| Maximum drain current (ID) | 100 A | 100 A | 100 A |
| Maximum drain-source on-resistance | 0.0078 Ω | 0.0078 Ω | 0.0078 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-263AB | TO-263AB |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Maximum pulsed drain current (IDM) | 300 A | 300 A | 300 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| JESD-609 code | e0 | e3 | - |
| Terminal surface | TIN LEAD | MATTE TIN | - |
| Brand Name | - | Renesas | Renesas |
| Manufacturer packaging code | - | PRSS0004AL-A3 | PRSS0004AL-A3 |
| Maximum drain current (Abs) (ID) | - | 100 A | 100 A |
| Maximum operating temperature | - | 175 °C | 175 °C |
| Maximum power dissipation(Abs) | - | 200 W | 200 W |
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