2SD2672T146 datasheet, PDF - EEWORLD Datasheet

2SD2672T146: DescriptionSmall Signal Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size27KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SD2672T146 Overview

Small Signal Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SC-96
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	270
JESD-30 code	R-PDSO-G3
JESD-609 code	e1
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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