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FDS8947AD84Z

Description
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
CategoryDiscrete semiconductor    The transistor   
File Size173KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FDS8947AD84Z Overview

Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

FDS8947AD84Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFAST SWITCHING
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)4 A
Maximum drain-source on-resistance0.052 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

FDS8947AD84Z Related Products

FDS8947AD84Z FDS8947AL99Z FDS8947AS62Z FDS8947AL86Z
Description Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Maker Fairchild Fairchild Fairchild Fairchild
Parts packaging code SOT SOT SOT SOT
package instruction SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Contacts 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features FAST SWITCHING FAST SWITCHING FAST SWITCHING FAST SWITCHING
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V
Maximum drain current (ID) 4 A 4 A 4 A 4 A
Maximum drain-source on-resistance 0.052 Ω 0.052 Ω 0.052 Ω 0.052 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 2 2 2 2
Number of terminals 8 8 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 20 A 20 A 20 A 20 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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