PHB55N03TT/R datasheet, PDF - EEWORLD Datasheet

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PHB55N03TT/R: DescriptionTRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size85KB，10 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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PHB55N03TT/R Overview

TRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

PHB55N03TT/R Parametric

Parameter Name	Attribute value
Maker	NXP
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)	80 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	55 A
Maximum drain current (ID)	55 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	103 W
Maximum pulsed drain current (IDM)	220 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

PHB55N03TT/R Related Products

	PHB55N03TT/R	934052190118	PHB55N03T/T3	PHB55N03T
Description	TRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	55A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3
Reach Compliance Code	compliant	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	ESD PROTECTED	ESD PROTECTED	ESD PROTECTED	ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)	80 mJ	80 mJ	80 mJ	80 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V
Maximum drain current (ID)	55 A	55 A	55 A	55 A
Maximum drain-source on-resistance	0.018 Ω	0.018 Ω	0.018 Ω	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	220 A	220 A	220 A	220 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maker	NXP	NXP	-	NXP
package instruction	-	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2

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