D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
Precision CMOS Single-Supply
Rail-to-Rail Input/Output Wideband
Operational Amplifiers
AD8601/AD8602/AD8604
FEATURES
Low Offset Voltage: 500 V Max
Single-Supply Operation: 2.7 V to 5.5 V
Low Supply Current: 750 A/Amplifier
Wide Bandwidth: 8 MHz
Slew Rate: 5 V/ s
Low Distortion
No Phase Reversal
Low Input Currents
Unity Gain Stable
APPLICATIONS
Current Sensing
Barcode Scanners
PA Controls
Battery-Powered Instrumentation
Multipole Filters
Sensors
ASIC Input or Output Amplifiers
Audio
FUNCTIONAL BLOCK DIAGRAM
14-Lead TSSOP
(RU Suffix)
5-Lead SOT-23
(RT Suffix)
OUT A
1
IN A
2
IN A
3
V
4
14
13
12
OUT D
IN D
IN D
V
IN C
IN C
OUT C
OUT A 1
V
2
5 V
AD8601
4
IN
AD8604
11
10
9
8
IN 3
IN B
5
IN B
6
OUT B
7
8-Lead MSOP
(RM Suffix)
OUT A
1
IN A
2
IN A
3
8
7
14-Lead SOIC
(R Suffix)
OUT A
1
IN A
2
14
OUT D
13
12
V
OUT B
IN B
IN B
AD8602
6
5
IN D
IN D
V
4
GENERAL DESCRIPTION
IN A
3
V
4
The AD8601, AD8602, and AD8604 are single, dual, and quad
rail-to-rail input and output single-supply amplifiers featuring very
low offset voltage and wide signal bandwidth. These amplifiers
use a new, patented trimming technique that achieves superior
performance without laser trimming. All are fully specified to
operate on a 3 V to 5 V single supply.
The combination of low offsets, very low input bias currents,
and high speed make these amplifiers useful in a wide variety of
applications. Filters, integrators, diode amplifiers, shunt current
sensors, and high impedance sensors all benefit from the combi-
nation of performance features. Audio and other ac applications
benefit from the wide bandwidth and low distortion. For the
most cost-sensitive applications, the D grades offer this ac per-
formance with lower dc precision at a lower price point.
Applications for these amplifiers include audio amplification for
portable devices, portable phone headsets, bar code scanners,
portable instruments, cellular PA controls, and multipole filters.
The ability to swing rail-to-rail at both the input and output
enables designers to buffer CMOS ADCs, DACs, ASICs, and
other wide output swing devices in single-supply systems.
AD8604
11
V
10
9
8
IN B
5
IN B
6
OUT B
7
IN C
IN C
OUT C
8-Lead SOIC
(R Suffix)
OUT A 1
IN A 2
IN A 3
V
4
8 V
AD8602
7 OUT B
6
5
IN B
IN B
The AD8601, AD8602, and AD8604 are specified over the
extended industrial (–40°C to +125°C) temperature range. The
AD8601, single, is available in the tiny 5-lead SOT-23 package.
The AD8602, dual, is available in 8-lead MSOP and narrow
SOIC surface-mount packages. The AD8604, quad, is available
in 14-lead TSSOP and narrow SOIC packages.
SOT, MSOP, and TSSOP versions are available in tape and
reel only.
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© 2003 Analog Devices, Inc. All rights reserved.
AD8601/AD8602/AD8604–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
INPUT CHARACTERISTICS
Offset Voltage (AD8601/AD8602) V
OS
(V
S
= 3 V, V
CM
= V
S
/2, T
A
= 25 C, unless otherwise noted.)
Conditions
0 V
≤
V
CM
≤
1.3 V
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+125°C
0 V
≤
V
CM
≤
3 V
*
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+125°C
V
CM
= 0 V to 1.3 V
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+125°C
V
CM
= 0 V to 3.0 V
*
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+125°C
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+125°C
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+125°C
V
CM
= 0 V to 3 V
V
O
= 0.5 V to 2.5 V,
R
L
= 2 kΩ , V
CM
= 0 V
0
68
30
83
100
2
2.95
20
±
30
12
67
80
680
56
1,000
1,300
35
50
A Grade
Min
Typ
Max
80
500
700
1,100
750
1,800
2,100
600
800
1,600
800
2,200
2,400
60
100
1,000
30
50
500
3
D Grade
Min
Typ
Max
1,100
6,000
7,000
7,000
6,000
7,000
7,000
6,000
7,000
7,000
6,000
7,000
7,000
200
200
1,000
100
100
500
3
Unit
µV
µV
µV
µV
µV
µV
µV
µV
µV
µV
µV
µV
pA
pA
pA
pA
pA
pA
V
dB
V/mV
µV/°C
V
V
mV
mV
mA
Ω
350
1,300
Offset Voltage (AD8604)
V
OS
80
1,100
350
1,300
Input Bias Current
I
B
Input Offset Current
I
OS
0.2
25
150
0.1
0.2
25
150
0.1
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
CMRR
A
VO
∆V
OS
/∆T
V
OH
V
OL
I
OUT
Z
OUT
PSRR
I
SY
0
52
20
65
60
2
2.95
20
±
30
12
72
680
35
50
I
L
= 1.0 mA
–40°C
≤
T
A
≤
+125°C
I
L
= 1.0 mA
–40°C
≤
T
A
≤
+125°C
f = 1 MHz, A
V
= 1
V
S
= 2.7 V to 5.5 V
V
O
= 0 V
–40°C
≤
T
A
≤
+125°C
R
L
= 2 kΩ
To 0.01%
2.92
2.88
2.92
2.88
dB
1,000
µA
1,300
µA
V/µs
µs
MHz
Degrees
nV/√Hz
nV/√Hz
pA/√Hz
SR
t
S
GBP
o
e
n
e
n
i
n
5.2
<0.5
8.2
50
33
18
0.05
5.2
<0.5
8.2
50
33
18
0.05
f = 1 kHz
f = 10 kHz
*For
V
CM
between 1.3 V and 1.8 V, V
OS
may exceed specified value.
Specifications subject to change without notice.
–2–
REV. D
AD8601/AD8602/AD8604
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
INPUT CHARACTERISTICS
Offset Voltage (AD8601/AD8602) V
OS
Offset Voltage (AD8604)
Input Bias Current
V
OS
I
B
(V
S
= 5.0 V, V
CM
= V
S
/2, T
A
= 25 C, unless otherwise noted.)
Conditions
0 V
≤
V
CM
≤
5 V
–40°C
≤
T
A
≤
+125°C
V
CM
= 0 V to 5 V
–40°C
≤
T
A
≤
+125°C
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+125°C
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+125°C
V
CM
= 0 V to 5 V
V
O
= 0.5 V to 4.5 V,
R
L
= 2 kΩ, V
CM
= 0 V
0
74
30
0.1
6
25
89
80
A Grade
Min
Typ
Max
80
80
0.2
500
1,300
600
1,700
60
100
1,000
30
50
500
5
D Grade
Min
Typ
Max
1,300
1,300
0.2
6,000
7,000
6,000
7,000
200
200
1,000
100
100
500
5
Unit
µV
µV
µV
µV
pA
pA
pA
pA
pA
pA
V
dB
V/mV
Input Offset Current
I
OS
0.1
6
25
0
56
20
67
60
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
CMRR
A
VO
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage High
∆V
OS
/∆T
V
OH
2
I
L
= 1.0 mA
I
L
= 10 mA
–40°C
≤
T
A
≤
+125°C
I
L
= 1.0 mA
I
L
= 10 mA
–40°C
≤
T
A
≤
+125°C
f = 1 MHz, A
V
= 1
V
S
= 2.7 V to 5.5 V
V
O
= 0 V
67
4.925
4.7
4.6
4.975
4.77
15
125
±
50
10
80
750
56
1,200
30
175
250
4.925
4.7
4.6
2
4.975
4.77
15
125
±
50
10
72
750
30
175
250
µV/°C
V
V
V
mV
mV
mV
mA
Ω
Output Voltage Low
V
OL
Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Full Power Bandwidth
Gain Bandwidth Product
I
OUT
Z
OUT
PSRR
I
SY
–40°C
≤
T
A
≤
+125°C
6
<1.0
360
8.4
1,500
6
<1.0
360
8.4
1,500
µA
V/µs
µs
kHz
MHz
dB
1,200
µA
SR
t
S
BWp
GBP
R
L
= 2 kΩ
To 0.01%
< 1% Distortion
Phase Margin
NOISE PERFORMANCE
Voltage Noise Density
o
e
n
e
n
f = 1 kHz
f = 10 kHz
55
33
18
55
33
18
Degrees
nV/√
Hz
nV/√
Hz
pA/
√
Hz
Current Noise Density
i
n
f = 1 kHz
0.05
0.05
Specifications subject to change without notice.
REV. D
–3–
AD8601/AD8602/AD8604
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . .
±
6 V
Storage Temperature Range
R, RM, RT, RU Packages . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
AD8601/AD8602/AD8604 . . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
R, RM, RT, RU Packages . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV HBM
*Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Package Type
5-Lead SOT-23 (RT)
8-Lead SOIC (R)
8-Lead MSOP (RM)
14-Lead SOIC (R)
14-Lead TSSOP (RU)
JA
*
JC
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
230
158
210
120
180
92
43
45
36
35
*
JA
is specified for worst-case conditions, i.e.,
JA
is specified for device in
socket for PDIP packages;
JA
is specified for device soldered onto a circuit
board for surface-mount packages.
ORDERING GUIDE
Model
AD8601ART-R2
AD8601ART-REEL
AD8601ART-REEL7
AD8601DRT-R2
AD8601DRT-REEL
AD8601DRT-REEL7
AD8602AR
AD8602AR-REEL7
AD8602AR-R2
AD8602DR
AD8602DR-REEL
AD8602DR-REEL7
AD8602ARM-R2
AD8602ARM-REEL
AD8602DRM-REEL
AD8604AR
AD8604AR-REEL
AD8604AR-REEL7
AD8604DR
AD8604DR-REEL
AD8604ARU
AD8604ARU-REEL
AD8604DRU
AD8604DRU-REEL
Temperature
Range
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
Package
Description
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead MSOP
8-Lead MSOP
8-Lead MSOP
14-Lead SOIC
14-Lead SOIC
14-Lead SOIC
14-Lead SOIC
14-Lead SOIC
14-Lead TSSOP
14-Lead TSSOP
14-Lead TSSOP
14-Lead TSSOP
Package
Option
RT-5
RT-5
RT-5
RT-5
RT-5
RT-5
R-8
R-8
R-8
R-8
R-8
R-8
RM-8
RM-8
RM-8
R-14
R-14
R-14
R-14
R-14
RU-14
RU-14
RU-14
RU-14
Branding
AAA
AAA
AAA
AAD
AAD
AAD
ABA
ABA
ABD
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8601/AD8602/AD8604 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
–4–
REV. D