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HYB39S256800DT-7.5

Description
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54
Categorystorage    storage   
File Size605KB,28 Pages
ManufacturerQIMONDA
Download Datasheet Parametric View All

HYB39S256800DT-7.5 Overview

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54

HYB39S256800DT-7.5 Parametric

Parameter NameAttribute value
MakerQIMONDA
package instructionTSOP, TSOP54,.46,32
Reach Compliance Codeunknown
Maximum access time5.4 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width8
Number of terminals54
word count33554432 words
character code32000000
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.19 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Data Sheet, Rev. 1.02, Feb. 2004
HYB39S256400D[C/T](L)
HYB39S256800D[C/T](L)
HYB39S256160D[C/T](L)
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