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MBRF1030CT

Description
10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size328KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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MBRF1030CT Overview

10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB

MBRF1020CT THRU MBRF10100CT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
Forward Current - 10.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Dual rectifier construction, positive center tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
.157(4.0)
.142(3.6)
ITO-220AB
.138(3.5)
.122(3.1)
.118(3.0)
.102(2.6)
.189(4.8)
.173(4.4)
.118(3.0)
.106(2.7)
.406(10.3)
.386(9.8)
.610(15.5)
.571(14.5)
MECHANICAL DATA
Case: JEDEC ITO-220AB molded plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250
o
C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
.059(1.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
.071(1.8)
.055(1.4)
.571(14.5)
.531(13.5)
.114(2.9)
.098(2.5)
.030(0.76)
.020(0.51)
PIN 1 -
PIN 3 -
+
PIN 2
Dim ensions in inches and (m illim eters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
C
= 95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
@I
F
= 5.0A
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
T
j
, T
STG
0.55
0.5
50
700
-65 to +150
MBRF
1020CT
MBRF
1030CT
MBRF
1040CT
MBRF
MBRF
1045CT 1050CT
MBRF
MBRF
MBRF
1060CT 1080CT 10100CT
Unit
20
14
30
21
40
28
45
32
10
150
50
35
60
42
80
56
100
70
V
V
A
A
0.75
0.85
V
mA
pF
°C
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

MBRF1030CT Related Products

MBRF1030CT MBRF10100CT MBRF1040CT MBRF1045CT MBRF1050CT MBRF1060CT MBRF1080CT MBRF1020CT
Description 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

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