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“Standard”:
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DATA SHEET
SILICON TRANSISTOR
2SC5289
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital
cordless phones (DECT, PHS, etc.).
PACKAGE DRAWING
(Unit: mm)
0.4
+0.1
–0.05
2.8
+0.2
–0.3
+0.2
1.5
–0.1
2
3
FEATURES
• P
–1
= 27 dBm TYP.
@f = 1.9 GHz, V
CC
= 3.6 V, I
Cq
= 1 mA (Class AB), Duty = 1/8
2.9±0.2
(1.8)
0.85 0.95
EIAJ: SC-61
1
0.6
+0.1
–0.05
Part Number
2SC5289-T1
Quantity
3 Kpcs/Reel
Packing Style
1.1
+0.2
–0.1
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
5°
5°
0 to 0.1
Remark
To order evaluation samples, contact your nearby sales office.
(Unit sample quantity is 50 pcs.)
5°
5°
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Rating
9.0
6.0
2.0
300
200 (CW)
1.2 (duty = 1/8)
Note
3.0 (duty = 1/24)
Note
Junction Temperature
Storage Temperature
T
j
T
stg
150
–65 to +150
Unit
V
V
V
mA
mW
W
W
˚C
˚C
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Note
Pulse period is 10 msec or less.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10040EJ01V0DS (1st edition)
(Previous No. P10250EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Corporation 1995
NEC Compound Semiconductor Devices 2001
0.16
+0.1
–0.06
0.8
0.4
+0.1
–0.05
ORDERING INFORMATION
4
(1.9)
• 4-Pin Mini Mold Package
0.4
+0.1
–0.05
T-90
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