2SB1358T114/EF datasheet, PDF - EEWORLD Datasheet

2SB1358T114/EF: DescriptionPower Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size110KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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2SB1358T114/EF Overview

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	12 MHz
VCEsat-Max	1.5 V
Base Number Matches	1

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