SD1019-5 datasheet, PDF - EEWORLD Datasheet

SD1019-5: DescriptionRF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4; CategoryDiscrete semiconductor The transistor; File Size18KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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SD1019-5 Overview

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, O-CRFM-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	9 A
Collector-based maximum capacity	150 pF
Collector-emitter maximum voltage	35 V
Configuration	Single
Minimum DC current gain (hFE)	5
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-CRFM-F4
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	117 W
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
Transistor component materials	SILICON

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