Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon,
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| package instruction | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 400 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 56 |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e2 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 10 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN COPPER |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 12 MHz |
| VCEsat-Max | 1 V |
| Base Number Matches | 1 |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD