Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Solitron Devices Inc. |
package instruction | FLANGE MOUNT, S-MSFM-P3 |
Reach Compliance Code | unknown |
Other features | HIGH RELIABILITY |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 800 V |
Maximum drain current (Abs) (ID) | 9 A |
Maximum drain current (ID) | 9 A |
Maximum drain-source on-resistance | 1.4 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-254AA |
JESD-30 code | S-MSFM-P3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | METAL |
Package shape | SQUARE |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 240 W |
Maximum power dissipation(Abs) | 240 W |
Maximum pulsed drain current (IDM) | 36 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | PIN/PEG |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Maximum off time (toff) | 142 ns |
Maximum opening time (tons) | 63 ns |