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SD210CHP

Description
Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size115KB,2 Pages
ManufacturerUniversal Semiconductor Inc
Download Datasheet Parametric View All

SD210CHP Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SD210CHP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerUniversal Semiconductor Inc
package instructionUNCASED CHIP, R-XUUC-N3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW THRESHOLD
ConfigurationSINGLE
Minimum drain-source breakdown voltage10 V
Maximum drain current (Abs) (ID)0.05 A
Maximum drain current (ID)0.05 A
Maximum drain-source on-resistance70 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.5 pF
JESD-30 codeR-XUUC-N3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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