SOT-86 packages. A SOT-89 version is also available as
the ECG055B. All devices are 100% RF and DC tested.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the ECG055C will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and fixed wireless.
Functional Diagram
GND
4
RF In
1
RF Out
3
2
GND
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Applications
•
•
•
•
•
Mobile Infrastructure
CATV / FTTX
WLAN / ISM
RFID
WiMAX / WiBro
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output IP3
(2)
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
Device Voltage
Device Current
Typical Performance
(1)
Units
MHz
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Min
DC
Typ
1000
19.7
+18
+34
2000
18
22
21
+18
+32
3.4
4.8
65
Max
6000
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
20.1
-35
-23
+18
+34
3.6
Typical
900
19.7
-26
-22
+18.1
+34
3.4
1900
18.2
-22
-21
+18.2
+32
3.4
2140
17.9
-22
-21
+17.8
+30.5
3.4
17
19
4.2
5.3
Not Recommended For
New Designs
Recommended replacement parts:
AG403-86G
1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +6 V, Rbias = 18
Ω,
50
Ω
system.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power (continuous)
Device Current
Thermal Resistance, Rth
Junction Temperature
Rating
-65 to +150
°C
+12 dBm
150 mA
179°C/W
+160°C
Ordering Information
Part No.
ECG055C-G
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7” reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 1 of 4
June 2011
ECG055C
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +6 V, R
bias
= 18
Ω
, I
cc
= 65 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
20.3
-35
-23
+18.2
+33
3.4
500
20.1
-35
-23
+18
+33.5
3.6
900
19.7
-26
-22
+18.1
+34.5
3.4
1900
18.2
-22
-21
+18.2
+33.5
3.4
2140
17.9
-22
-21
+17.8
+32.9
3.4
2400
17.6
-22
-20
+17.8
+32
3.8
3500
16.1
-24
-17
+17.2
5800
13.7
-21
-11
1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 18
Ω,
Icc = 65 mA typical, 50
Ω
System.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain
22
20
Return Loss
Icc vs. Vde
160
0
S11
S22
S 1 1 , S 2 2 (d B )
-10
-20
-30
-40
120
G a in (d B )
18
16
14
12
Icc (mA)
80
40
25°C
0
4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)
OIP3 vs. Frequency
40
35
OIP3 (dBm)
30
25
2.5
5.0
4.5
Frequency (GHz)
Noise Figure
20
Vde (V)
P1dB vs. Frequency
3.5
3.0
P1dB (dBm)
4.0
18
NF (dB)
16
25°C
14
-40°C
85°C
4
25°C
20
1
-40°C
85°C
4
2
3
Frequency (MHz)
2.0
800
1000
1200
1400
1600
1800
2000
1
Frequency (MHz)
2
3
Frequency (MHz)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 4
June 2011
ECG055C
InGaP HBT Gain Block
Recommended Application Circuit
Vcc
Icc = 65 mA
R4
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 F
L1
RF Choke
RF IN
ECG055
C1
Blocking
Capacitor
C2
Blocking
Capacitor
RF OUT
Reference
Designator
L1
C1, C2, C4
50
820 nH
.018 µF
Recommended Component Values
Frequency (MHz)
500
900
1900
2200
220 nH
68 nH
27 nH
22 nH
1000 pF
100 pF
68 pF
68 pF
2500
18 nH
56 pF
3500
15 nH
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig.
L1
C1, C2
C3
C4
R4
Value / Type
39 nH wirewound inductor
56 pF chip capacitor
0.018
µF
chip capacitor
Do Not Place
18
Ω
1% tolerance
Size
0603
0603
0603
0805
Recommended Bias Resistor Values
Supply
R1 value
Size
Voltage
6V
18.5 ohms
0805
7V
33.8 ohms
1210
8V
49 ohms
1210
9V
65 ohms
2010
10 V
80 ohms
2010
12 V
111 ohms
2512
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +6 V. A
1% tolerance resistor is recommended.
Typical Device S-Parameters
S-Parameters (V
device
= +4.8 V, I
CC
= 65 mA, T = 25°C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
-38.17
-30.35
-26.51
-23.32
-22.01
-21.87
-21.62
-23.63
-26.77
-31.76
-32.57
-24.49
-18.97
9.34
38.64
30.55
16.54
8.06
-3.80
-11.61
-13.22
-23.25
-20.76
122.50
133.61
125.72
20.30
20.11
19.67
19.00
18.39
17.62
16.91
16.27
15.65
15.09
14.65
14.16
13.73
178.31
161.09
143.04
126.43
111.18
96.71
83.83
71.31
59.48
47.94
36.34
24.39
13.11
-22.39
-22.33
-22.23
-22.09
-21.81
-21.55
-21.16
-20.78
-20.29
-19.79
-19.25
-18.78
-18.29
0.12
0.74
1.87
2.57
3.37
3.41
3.82
3.21
2.65
1.21
-0.79
-3.46
-6.40
-22.58
-23.00
-22.48
-21.21
-20.79
-19.71
-18.27
-17.28
-15.32
-14.24
-12.75
-11.56
-10.39
-1.41
-29.41
-50.33
-77.23
-101.82
-119.95
-141.35
-155.62
-170.83
174.50
163.59
150.73
140.55
Device S-parameters are available for download from the website at: http://www.triquint.com
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 4
June 2011
ECG055C
InGaP HBT Gain Block
ECG055C-G Mechanical Information
This package is lead-free/Green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with
both lead-free (maximum 260
°C
reflow temperature) and leaded (maximum 245
°C
reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with a two-digit
numeric lot code (shown as “XX”) followed
with an “S” designator on the top surface of the
package. The obsolete tin-lead package is
marked with a two-digit numeric lot code
followed with a “Y” designator; it may also
have been marked with a “Y” designator
followed by a two-digit lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passes between 250 and 500V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260
°C
convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
Specifications and information are subject to change without notice
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