BZW06P64B datasheet, PDF - EEWORLD Datasheet

BZW06P64B: Description600W, BIDIRECTIONAL, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size193KB，7 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BZW06P64B Overview

600W, BIDIRECTIONAL, SILICON, TVS DIODE

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
package instruction	O-PALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	82.5 V
Minimum breakdown voltage	71.3 V
Breakdown voltage nominal value	75 V
Shell connection	ISOLATED
Maximum clamping voltage	134 V
Configuration	SINGLE
Minimum diode capacitance	287.5 pF
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	BIDIRECTIONAL
Maximum power dissipation	1.7 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	64 V
Maximum reverse current	5 µA
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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