NAND01GW4B3CZA1T datasheet, PDF

NAND01GW4B3CZA1T: DescriptionFlash, 64MX16, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63; Categorystorage storage; File Size999KB，59 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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NAND01GW4B3CZA1T Overview

Flash, 64MX16, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Numonyx ( Micron )
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	63
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	35 ns
JESD-30 code	R-PBGA-B63
length	12 mm
memory density	1073741824 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	63
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.05 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	9.5 mm

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