IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
OptiMOS
®
-T2
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
55
21.3
25
V
mΩ
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB25N06S3L-22
IPI25N06S3L-22
IPP25N06S3L-22
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L22
3N06L22
3N06L22
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=12.5 A
Value
25
25
100
120
25
±16
50
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.1
page 1
2007-11-07
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
minimal footprint
6 cm
2
cooling area
4)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=20 µA
V
DS
=55 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=55 V,
V
GS
=0 V,
T
j
=125 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16 V,
V
DS
=0 V
V
GS
=5 V,
I
D
=11 A
V
GS
=5 V,
I
D
=11 A,
SMD version
V
GS
=10 V,
I
D
=17 A
V
GS
=10 V,
I
D
=17 A,
SMD version
55
1.2
-
-
1.7
0.01
-
2.2
1
µA
V
-
-
-
-
-
-
-
-
3.3
62
62
40
K/W
Values
typ.
max.
Unit
-
-
-
-
-
-
1
1
32.9
32.6
18.4
18.1
100
100
39.9
39.6
21.6
21.3
nA
mΩ
Rev. 1.1
page 2
2007-11-07
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
1)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=27.5 V,
V
GS
=10 V,
I
D
=25 A,
R
G
=14.8
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
2260
283
270
9
26
30
43
-
-
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=11 V,
I
D
=25 A,
V
GS
=0 to 10 V
-
-
-
-
11
6
31
4.7
-
-
47
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=25 A,
T
j
=25 °C
V
R
=27.5 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
0.6
-
-
-
-
0.9
15
15
25
100
1.3
-
-
A
V
ns
nC
Current is limited by bondwire; with an
R
thJC
= 3.3 K/W the chip is able to carry 31 A at 25°C. For detailed
information see Application Note ANPS071E
2)
Defined by design. Not subject to production test.
Qualified at -5V and +16V.
3)
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2007-11-07
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
4 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
4 V
50
30
40
20
30
P
tot
[W]
20
10
10
0
0
50
100
150
200
I
D
[A]
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
0.1
10
0
100
1 µs
0.05
10 µs
Z
thJC
[K/W]
I
D
[A]
100 µs
10
-1
0.05
10
1 ms
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.1
page 4
2007-11-07
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
100
10 V
10V
8V
8V
6 Typ. drain-source on resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
60
55
7V
4.5 V
5V
5.5 V
80
6.5 V
50
45
I
D
[A]
6V
R
DS(on)
[mΩ]
60
40
35
6V
40
5.5 V
30
6.5 V
5V
25
20
15
7V
8V
10 V
20
4.5 V
0
0
2
4
6
10
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 4 V
parameter:
T
j
60
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 25 A;
V
GS
= 10 V
35
50
30
-55 °C
40
R
DS(on)
[m
Ω
]
6
25
I
D
[A]
25 °C
30
175 °C
20
20
10
15
0
0
1
2
3
4
5
10
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.1
page 5
2007-11-07
Analog electronics
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