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2SD1226MC2/PR

Description
Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size102KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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2SD1226MC2/PR Overview

Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

2SD1226MC2/PR Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.7 A
Collector-based maximum capacity10 pF
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max0.4 V
Base Number Matches1

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