1N5419 datasheet, PDF - EEWORLD Datasheet

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1N5419: Description3 A, 500 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size78KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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1N5419 Overview

3 A, 500 V, SILICON, RECTIFIER DIODE

1N5419 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compli
Other features	HIGH RELIABILITY
application	FAST RECOVERY
Minimum breakdown voltage	550 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	80 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	500 V
Maximum reverse current	1 µA
Maximum reverse recovery time	0.25 µs
Reverse test voltage	500 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

1N5419 Related Products

	1N5419	1N5415	1N5416	1N5420	1N5418	1N5417
Description	3 A, 500 V, SILICON, RECTIFIER DIODE	3 A, 50 V, SILICON, RECTIFIER DIODE	3 A, 100 V, SILICON, RECTIFIER DIODE	3 A, 600 V, SILICON, RECTIFIER DIODE	3 A, 400 V, SILICON, RECTIFIER DIODE	3 A, 200 V, SILICON, RECTIFIER DIODE
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compli	compli	compli	compli	compli	compli
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Minimum breakdown voltage	550 V	55 V	110 V	660 V	440 V	220 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	80 A	80 A	80 A	80 A	80 A	80 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	500 V	50 V	100 V	600 V	400 V	200 V
Maximum reverse current	1 µA	1 µA	1 µA	1 µA	1 µA	1 µA
Maximum reverse recovery time	0.25 µs	0.15 µs	0.15 µs	0.4 µs	0.15 µs	0.15 µs
Reverse test voltage	500 V	50 V	100 V	600 V	400 V	200 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-

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