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IRF6100TR

Description
Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLIPFET, ISOMETRIC-4
CategoryDiscrete semiconductor    The transistor   
File Size288KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

IRF6100TR Overview

Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLIPFET, ISOMETRIC-4

IRF6100TR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeFLIP-CHIP
package instructionFLIPFET, ISOMETRIC-4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)5.1 A
Maximum drain current (ID)5.1 A
Maximum drain-source on-resistance0.065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PBGA-B4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2.2 W
Certification statusNot Qualified
surface mountYES
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 93930C
IRF6100
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Ultra Low
R
DS(on)
per Footprint Area
Low
Thermal Resistance
P-Channel MOSFET
One-third Footprint of SOT-23
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
V
DSS
-20V
R
DS(on)
max
0.065
@V
GS
= -4.5V
0.095
@V
GS
= -2.5V
I
D
-5.1A
-4.1A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for,
provides the designer with an ex-
D
G
S
FlipFET
ISOMETRIC
tremely efficient and reliable device.
The FlipFET™ package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET™ the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current

Power Dissipation
ƒ
Power Dissipation
ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
θJA
R
θJ-PCB
Parameter
Junction-to-Ambient
ƒ
Junction-to-PCB mounted
Typ.
35
Max.
56.5
–––
Units
°C/W
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