IPD042P03L3G datasheet, PDF - EEWORLD Datasheet

IPD042P03L3G: Description70 A, 30 V, 0.0068 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252; CategoryDiscrete semiconductor The transistor; File Size306KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPD042P03L3G Overview

70 A, 30 V, 0.0068 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	269 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	70 A
Maximum drain current (ID)	70 A
Maximum drain-source on-resistance	0.0068 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	280 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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