IGC11T120T6L
IGBT4 Low Power Chip
FEATURES:
•
1200V Trench + Field Stop technology
•
low switching losses
•
positive temperature coefficient
•
easy paralleling
This chip is used for:
•
low / medium power modules
C
Applications:
•
low / medium power drives
G
E
Chip Type
IGC11T120T6L
V
CE
1200V
I
Cn
8A
Die Size
3.48 x 3.19 mm
2
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
3.48 x 3.19
1.965 x 1.716
0.608 x 0.608
11.1 / 5.5
115
150
0
1353
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
grd
mm
2
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007
IGC11T120T6L
MAXIMUM RATINGS
Parameter
Collector-Emitter voltage ,
T
j=25
°C
DC collector current, limited by T
jmax
Pulsed collector current, t
p
limited by T
jmax
Gate -Emitter voltage
Operating junction temperature
Short circuit data
2 )
V
GE
= 15V, V
CC
= 800V,
Tvj = 150°C
Reverse bias safe operating area
2 )
(RBSOA)
1)
2)
Symbol
V
C E
I
C
I
c p u l s
V
G E
T
j
tp
Value
1200
1)
Unit
V
A
A
V
°C
µs
24
±20
-40 ... +175
10
I
C max
= 16 A, V
CE max
= 1200V, Tvj max= 150°C
depending on thermal properties of assembly
not subject to production test - verified by design/characterization
STATIC CHARACTERISTICS (tested on wafer ),
T
j =25
°C
Parameter
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate -Emitter threshold voltage
Zero gate voltage collector current
Gate -Emitter leakage current
Integrated gate res istor
Symbol
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
R
Gint
Conditions
min.
V
GE
=0V , I
C
= 0.5 m A
V
GE
=15V, I
C
=8A
I
C
=0.3mA , V
GE
= V
C E
V
CE
=1200V , V
GE
=0V
V
C E
=0V , V
GE
=20V
-
1200
1.6
5.0
1.85
5.8
2.1
6.5
1
120
µA
nA
Ω
V
Value
typ.
max.
Unit
ELECTRICAL CHARACTERISTICS
(not subject to production test - verified by design/characterization)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
C
iss
C
oss
C
rss
Conditions
V
C E
= 2 5 V ,
V
GE
=0V,
f=1MHz
Value
min.
typ.
490
50
30
pF
max.
Unit
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007
IGC11T120T6L
SWITCHING CHARACTERISTICS
inductive load (not subject to production test - verified by design
/characterization)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1)
Symbol
t
d ( o n )
t
r
t
d ( o f f )
t
f
Conditions
1)
T
j
= 1 2 5°C
V
C C
=600V,
I
C
=8 A,
V
GE
=- 1 5 / 1 5 V ,
R
G
= - - -
Ω
Value
min.
typ.
tbd
tbd
max.
Unit
ns
tbd
tbd
values also influenced by parasitic L- and C- in measurement and package.
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007
IGC11T120T6L
CHIP DRAWING
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007
IGC11T120T6L
FURTHER EL ECTRICAL CHARACTERISTICS
This chip data sheet refers to the
device data sheet
tbd
DESCRIPTION
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life -support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life -support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007
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