HER608 datasheet, PDF - EEWORLD Datasheet

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HER608: Description6 A, 1000 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size41KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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HER608 Overview

6 A, 1000 V, SILICON, RECTIFIER DIODE

HER608 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
package instruction	O-PALF-W2
Reach Compliance Code	compli
Other features	LOW LEAKAGE CURRENT, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	250 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Guideline	TS 16949
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.075 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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HER601 - HER608

PRV : 50 - 1000 Volts

Io : 6.0 Amperes

FEATURES :

*

High surge current capability

Low leakage current

Forward voltage drop

Low power loss

High efficiency

Pb / RoHS Free

HIGH EFFICIENT

RECTIFIER DIODES

D6

0.360 (9.1)

0.340 (8.6)

1.00 (25.4)

MIN.

0.360 (9.1)

0.340 (8.6)

MECHANICAL DATA :

* Case : Void-free molded plastic body

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 2.1 grams

Rating at 25

°

C ambient temperature unless otherwise specifie.

Single phase, half wave, 60 Hz, resistive or inductive load

For capacitive load, derate current by 20%

0.052 (1.32)

0.048 (1.22)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length

Ta = 55

°C

Maximum Peak Forward Surge Current,

8.3ms Single half sine wave superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at I

F

= 6.0 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25

°C

Ta = 100

°C

SYMBOL

V

RRM

V

RMS

V

DC

I

F(AV)

HER

601

50

35

50

HER

602

100

70

100

HER

603

200

140

200

HER

604

300

210

300

HER

605

400

280

400

HER

606

600

420

600

HER

607

800

560

800

HER

608

1000

700

1000

UNIT

V

A

6.0

I

FSM

V

F

I

R

I

R(H)

Trr

C

J

T

J

T

STG

50

1.1

200

1.7

10

50

75

50

- 65 to + 150

A

V

μA

ns

pf

°C

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Junction Temperature Range

Storage Temperature Range

Notes :

( 1 ) Reverse Recovery Test Conditions : I

F

= 0.5 A, I

R

= 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V

DC

Page 1 of 2

Rev. 01 : February 20, 2006

HER608 Related Products

	HER608	HER601	HER602	HER603	HER604	HER606	HER605	HER607
Description	6 A, 1000 V, SILICON, RECTIFIER DIODE	6 A, 50 V, SILICON, RECTIFIER DIODE	6 A, 100 V, SILICON, RECTIFIER DIODE	6 A, SILICON, RECTIFIER DIODE	6 A, SILICON, RECTIFIER DIODE	6 A, SILICON, RECTIFIER DIODE	6 A, SILICON, RECTIFIER DIODE	6 A, SILICON, RECTIFIER DIODE
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli
Other features	LOW LEAKAGE CURRENT, LOW POWER LOSS	LOW LEAKAGE CURRENT, LOW POWER LOSS	LOW LEAKAGE CURRENT, LOW POWER LOSS	LOW LEAKAGE CURRENT, LOW POWER LOSS	LOW LEAKAGE CURRENT, LOW POWER LOSS	LOW LEAKAGE CURRENT, LOW POWER LOSS	LOW LEAKAGE CURRENT, LOW POWER LOSS	LOW LEAKAGE CURRENT, LOW POWER LOSS
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V	1.1 V	1.1 V	1.1 V	1.1 V	1.7 V	1.1 V	1.7 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	250 A	250 A	250 A	250 A	250 A	250 A	250 A	250 A
Number of components	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	6 A	6 A	6 A	6 A	6 A	6 A	6 A	6 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Guideline	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949
Maximum repetitive peak reverse voltage	1000 V	50 V	100 V	200 V	300 V	600 V	400 V	800 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
Maximum reverse recovery time	0.075 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.075 µs	0.05 µs	0.075 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
package instruction	O-PALF-W2	-	O-PALF-W2	O-PALF-W2	-	O-PALF-W2	O-PALF-W2	-

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