FR104G datasheet, PDF - EEWORLD Datasheet

FR104G: Description1 A, 400 V, SILICON, SIGNAL DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size47KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compli
Is Samacsys	N
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
Maximum non-repetitive peak forward current	30 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.15 µs
surface mount	NO
Base Number Matches	1

	FR104G	FR101G_05	FR101G	FR105G	FR106G	FR102G	FR107G	FR103G
Description	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE, DO-41	SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	RECTIFIER DIODE,200V V(RRM),DO-41
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compli	-	compli	compli	compli	compli	compli	compli
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	-	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
Maximum non-repetitive peak forward current	30 A	-	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	1	-	1	1	1	1	1	1
Maximum operating temperature	175 °C	-	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	1 A	-	1 A	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	400 V	-	50 V	600 V	800 V	100 V	1000 V	200 V
Maximum reverse recovery time	0.15 µs	-	0.15 µs	0.25 µs	0.5 µs	0.15 µs	0.5 µs	0.15 µs
surface mount	NO	-	NO	NO	NO	NO	NO	NO
Base Number Matches	1	-	-	1	1	1	-	1

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