Single Channel Protector in SOT-23/µSOIC Packages
| Parameter Name | Attribute value |
| Source Url Status Check Date | 2013-05-01 14:56:37.52 |
| Brand Name | Analog Devices Inc |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | ADI |
| Parts packaging code | SOT |
| package instruction | RM-8, SOIC-8 |
| Contacts | 8 |
| Manufacturer packaging code | RM-8 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Configuration | SERIES, 3 ELEMENTS |
| Maximum drain current (ID) | 0.02 A |
| Maximum drain-source on-resistance | 115 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Number of components | 3 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 240 |
| Polarity/channel type | N-CHANNEL AND P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| ADG465BRM-REEL | ADG465BRMZ | |
|---|---|---|
| Description | Single Channel Protector in SOT-23/µSOIC Packages | Single Channel Protector in an SOT-23 Package and a MSOP Package |
| Brand Name | Analog Devices Inc | Analog Devices Inc |
| Is it lead-free? | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | conform to |
| Maker | ADI | ADI |
| Parts packaging code | SOT | SOT |
| package instruction | RM-8, SOIC-8 | SMALL OUTLINE, R-PDSO-G8 |
| Contacts | 8 | 8 |
| Manufacturer packaging code | RM-8 | RM-8 |
| Reach Compliance Code | not_compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Configuration | SERIES, 3 ELEMENTS | SERIES, 3 ELEMENTS |
| Maximum drain current (ID) | 0.02 A | 0.02 A |
| Maximum drain-source on-resistance | 115 Ω | 115 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 | R-PDSO-G8 |
| JESD-609 code | e0 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 3 | 3 |
| Number of terminals | 8 | 8 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 240 | 260 |
| Polarity/channel type | N-CHANNEL AND P-CHANNEL | N-CHANNEL AND P-CHANNEL |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | 30 | 30 |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
