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PDTA115TE,115

Description
PDTA115T series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open SC-75 3-Pin
CategoryDiscrete semiconductor    The transistor   
File Size210KB,18 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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PDTA115TE,115 Overview

PDTA115T series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open SC-75 3-Pin

PDTA115TE,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSC-75
package instructionPLASTIC, SC-75, 3 PIN
Contacts3
Manufacturer packaging codeSOT416
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

PDTA115TE,115 Related Products

PDTA115TE,115 PDTA115TM,315 PDTA115TT,215 PDTA115TU,115
Description PDTA115T series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open SC-75 3-Pin TRANS PNP W/RES 50V SOT-883 TRANS PREBIAS PNP 250MW TO236AB TRANS PREBIAS PNP 200MW SOT323
Brand Name Nexperia Nexperia Nexperia Nexperia
Maker Nexperia Nexperia Nexperia Nexperia
Parts packaging code SC-75 DFN TO-236 SC-70
package instruction PLASTIC, SC-75, 3 PIN CHIP CARRIER, R-PBCC-N3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Manufacturer packaging code SOT416 SOT883 SOT23 SOT323
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 100 100 100
JESD-30 code R-PDSO-G3 R-PBCC-N3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE CHIP CARRIER SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type PNP PNP PNP PNP
surface mount YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING NO LEAD GULL WING GULL WING
Terminal location DUAL BOTTOM DUAL DUAL
Maximum time at peak reflow temperature 40 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON

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