PDTA115TU,115 datasheet, PDF - EEWORLD Datasheet

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PDTA115TU,115: DescriptionTRANS PREBIAS PNP 200MW SOT323; CategoryDiscrete semiconductor The transistor; File Size210KB，18 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com

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PDTA115TU,115 Overview

TRANS PREBIAS PNP 200MW SOT323

PDTA115TU,115 Parametric

Parameter Name	Attribute value
Brand Name	Nexperia
Maker	Nexperia
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	SOT323
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

PDTA115TU,115 Related Products

	PDTA115TU,115	PDTA115TM,315	PDTA115TT,215	PDTA115TE,115
Description	TRANS PREBIAS PNP 200MW SOT323	TRANS PNP W/RES 50V SOT-883	TRANS PREBIAS PNP 250MW TO236AB	PDTA115T series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open SC-75 3-Pin
Brand Name	Nexperia	Nexperia	Nexperia	Nexperia
Maker	Nexperia	Nexperia	Nexperia	Nexperia
Parts packaging code	SC-70	DFN	TO-236	SC-75
package instruction	SMALL OUTLINE, R-PDSO-G3	CHIP CARRIER, R-PBCC-N3	SMALL OUTLINE, R-PDSO-G3	PLASTIC, SC-75, 3 PIN
Contacts	3	3	3	3
Manufacturer packaging code	SOT323	SOT883	SOT23	SOT416
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	100	100	100
JESD-30 code	R-PDSO-G3	R-PBCC-N3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	CHIP CARRIER	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	PNP	PNP	PNP	PNP
surface mount	YES	YES	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	NO LEAD	GULL WING	GULL WING
Terminal location	DUAL	BOTTOM	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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